In this paper, we are interested to deal with unified integral operators for strongly
φ
-convex function. We will present refinements of bounds of these unified integral operators and use them to get associated results for fractional integral operators. Several known results are connected with particular assumptions.
This paper deals with generalized integral operator inequalities which are established by using
φ
-quasiconvex functions. Bounds of an integral operator are established which have connections with different kinds of known fractional integral operators. All the results are deducible for quasiconvex functions. Some fractional integral inequalities are deduced.
In this modern era, energy devices have become an important part of our daily life. Various types of energy conversion devices have been developed to meet the current energy demands. Semiconductor anode (CdZnO) has been synthesized by the sol-gel method and lattice constants and the band gap results have been compared experimentally and theoretically. XRD results show that Cddoped ZnO shifts the peaks toward the lower angles, increases the lattice parameters, and decreases the crystallite size (48 nm). Microstructure of Cd-doped ZnO shows the agglomerations of particles, found in the shape of cubes, hexagons, and dumbbell shapes with diameter in the range of 2-7 µm. The experimentally obtained conductivity of CdZnO is 0.142 S/cm at 550 • C. The electrochemical impedance spectroscopy shows the decreased resistance with an increase in temperature. The doped system shows a maximum open circuit voltage of 0.95 V and performance of 0.52 W/cm 2 at 550 • C.
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