Studies of electrical and optical properties of cadmium‐doped zinc oxide for energy conversion devices

Abstract

In this modern era, energy devices have become an important part of our daily life. Various types of energy conversion devices have been developed to meet the current energy demands. Semiconductor anode (CdZnO) has been synthesized by the sol-gel method and lattice constants and the band gap results have been compared experimentally and theoretically. XRD results show that Cddoped ZnO shifts the peaks toward the lower angles, increases the lattice parameters, and decreases the crystallite size (48 nm). Microstructure of Cd-doped ZnO shows the agglomerations of particles, found in the shape of cubes, hexagons, and dumbbell shapes with diameter in the range of 2-7 µm. The experimentally obtained conductivity of CdZnO is 0.142 S/cm at 550 • C. The electrochemical impedance spectroscopy shows the decreased resistance with an increase in temperature. The doped system shows a maximum open circuit voltage of 0.95 V and performance of 0.52 W/cm 2 at 550 • C.

A nanostructured Al-doped ZnO as an ultra-sensitive room-temperature ammonia gas sensor

“…When pure semiconductor capabilities are insufficient to meet the demands of the desired applications, one of the most effective approaches to improve semiconductor performance is doping with appropriate elements. ZnO has been doped with aluminium [ 8 ], gallium [ 9 , 10 ], cadmium [ 11 ], copper [ 12 ], and other materials to optimise its optical, electrical, and physical properties. In the literature, Indeed, various publications have proposed chemoresistive sensors based on WO 3 [ 13 ], SnO 2 [ 14 ], Co 3 O 4 [ 15 ], and ZnO [ 16 ] that have been investigated for the detection of VOCs.…”