This paper presents an optimal design of a high-performance multi-output second-generation current conveyor (MO-CCII) based on 20[Formula: see text]nm Fin-Shaped Field Effect Transistor (FinFETs). Proposed MO-CCII has very low port X impedance and very high port Y impedance. The performance of the CCII has been thoroughly investigated in terms of DC, AC and transient characteristics of terminal voltages and branch currents and frequency response of port impedances. CCII shows the excellent high-frequency response of voltage as well as current transfer gains. The 3[Formula: see text]dB BW of voltage and current transfer gains are 11.2[Formula: see text]GHz and 11[Formula: see text]GHz, respectively. CCII provides excellent performance over its CMOS counterpart. Also, a resistor-less multi-function bi-quadratic filter is proposed. The filter depends on two CCIIs, a capacitor and does not require any resistors. It has three inputs and one output and realizes low-pass, high-pass and band-pass filters from a similar setup. FinFETs in the linear region are utilized as variable resistor to control filter properties. Nevertheless, the proposed filter has two floating capacitors which can be effortlessly realized in these days’ integrated circuit advancements. Also, a balanced modulator is proposed utilizing the proposed FinFET-based CCII and FinFET transistors only. Balanced modulator’s frequency of operation obtained is in GHz range.
This paper introduces for the first time all the steps required in the optimal design of carbon nanotube field-effect transistor (CNTFET)-based second generation current conveyor (CCII) using transconductance-to-drain current ratio ([Formula: see text]) technique for low-voltage (LV) and low-power (LP) applications. The [Formula: see text] technique is a well-established methodology for CMOS analog IC design. However, the difference between CMOS and CNTFET is that CMOS has continuous width while the width of CNTFET is discrete and depends on different parameters like the number of tubes, pitch and diameter ([Formula: see text]) of the carbon nanotube (CNT). Therefore, there is a need for a design technique by which one can easily design analog circuits using CNTFETs. The CCII is based on two-stage op-amp and two inverters used as class AB amplifiers. The performance of CCII has been extensively examined in terms of DC, AC and transient responses of node voltages, branch currents and node impedances using HSPICE simulations. The CCII operates at [Formula: see text]0.5[Formula: see text]V and has 172[Formula: see text][Formula: see text]W of power consumption. The designed CCII provides very high 3-dB bandwidth (BW) for current gain ([Formula: see text][Formula: see text]GHz as well as voltage gain ([Formula: see text][Formula: see text]GHz.
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