We propose a quantum dot infrared photodetector ͑QDIP͒ having distinct sensitivity to mutually orthogonal in-plane polarized infrared radiation, and applicable to practical infrared ͑IR͒ imaging applications. Our QDIP has either an InAs/AlAs/AlGaAs or an AlAs/InAs/AlAs/AlGaAs structure in which extra-thin AlAs layers were introduced underneath the AlGaAs buffer layer to strongly confine the carriers and also to enhance the dot density before the Stranski-Krastanov mode growth of InAs quantum dots was carried out. At 80 K, the detector has high sensitivity to in-plane orthogonally polarized infrared light, and photocurrent responsivity peaks of up to 230 mA/W associated with distinct mutually orthogonal polar lights which were observed at a wavelength of around 10.0 m.
High-efficiency operation at two micrometers for a very short (less than 30 mm long) Tm3+, Ho3+ co-doped AZF glass fiber laser pumped by a Ti:sapphire laser has been demonstrated near room temperature. A cw output power of up to 150 mW with a slope efficiency of 37% was achieved using a 24.5-mm-long, Tm3+, Ho3+ co-doped AZF glass fiber at 15° C.
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