High‐entropy (HE) oxides have become increasingly popular as electromagnetic wave‐absorbing materials owing to their customizable structure and unique HE effects. However, the weak loss property of single‐phase HE ceramics and the approaches implemented to improve them based on semi‐empirical rules severely limit their development. Herein, two biphasic HE oxides are prepared by simple sintering to realize accurate regulation of crystal phases and structural defects. It is verified that HE effects cause various defects that are beneficial for microwave dissipation within complex‐phase ceramics. In spinel/perovskite HE oxides, around the interface of spinel (111) and perovskite (110) planes, notable stress concentrations and lattice distortions are directly observed, inducing numerous point defects and stacking faults. Interestingly, besides the existing heterogeneous interface of rock salt (220)/spinel (220) plane and defects, rock salt/spinel HE oxides enabled synergistic effects via the precise regulation of components’ phase. Driven by structural defects and multi‐phases in HE complexes, the intense polarization is evidently found, confirmed by the first‐principles calculations. Accordingly, the two complex‐phase HE oxides demonstrate excellent microwave absorption performance, and the minimal reflection loss of −54.5 dB is achieved. Therefore, this study provides valuable guidelines for the design of microwave absorbers using HE oxides.

Severe lower‐frequency (2–8 GHz) microwave pollution caused by the rapid development of 5th generation (5G) communication posts significance on cutting‐edge microwave absorbers. However, the intensely coupled wave‐impedance and microwave dissipating ability dramatically hinder their performance in the exact lower‐frequency range. The rationally designed heterostructure of hard/soft ferrite composite provides an efficient solution to address the issue. In this context, core‐shell structured hard/soft BaFe(12‐x)CoxO19@Fe3O4 with abundant heterointerface is created using facile spray‐drying and subsequent solvothermal approach, where hard magnetic BaFe(12‐x)CoxO19 serves as the core and soft magnetic Fe3O4 serves as the shell, respectively. The unique core‐shell integration contributes sufficient magnetic exchange coupling interaction for strong magnetic loss beyond Snoek's limitation, which considerably boosts a lower‐frequency microwave absorption. Accordingly, the minimum reflection loss (RLmin) of typical BaFe11.6Co0.4O19@Fe3O4 microcomposite reaches −48.9 dB at the thickness of 3.5 mm, its bandwidth of reflection loss < −10 dB can cover almost all the S and C bands (2.6–8 GHz). Generally, an easy and controllable pathway is conveyed in this work to encourage improved magnetic loss ability as well as decouple the wave‐impedance and microwave dissipating ability in magnetic composites, which widens the road to the development of advanced lower‐frequency magnetic absorbers.

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Controlling the domain wall motion in the 2D ferromagnetic materials is significantly critical to the topological spin electronics, non-volatile magnetic memories, and logic devices. The elevation of the domain wall velocity has become an urgent challenge. Herein, a current-pulse-driving strategy is unprecedentedly established to boost the domain wall velocity with an out-of-plane magnetic field and a rising temperature in the Fe 3 GeTe 2 by using the in situ Lorentz Transmission Electron Microscopy. Elevation of domain wall velocity depends on the demagnetization energy increase and Zeeman energy reduction, which originates from the magnetic moments tilting by a non-parallel to the magnetic field. By injecting ≈2000 times of alternative current pulses, a uniform instead of an unsynchronized domain wall velocity is achieved. The key mechanism lies in the decrease of the domain wall number, leading to a reduction in the expansion and compression of the domain areas. Optimized pulse parameters are applied with a critical duration of 60 ns and the density of ≈2 × 10 10 A m −2 , leading to an elevation of velocity from 0.0308 to 0.39 m s −1 . The elevation in magnetic domain wall velocity can be useful for the application of 2D van der Waals ferromagnetic materials in future spintronic devices.

Abstract0D nanomaterials with high efficiency of atom utilization possess extraordinary tunability over bulk materials. Precise reconstruction of atoms in a 0D nanoparticle toward tuning of crystalline phases and defects is highly desirable but remains a grand challenge. In this study, a crystallization rate‐controlled strategy is reported to achieve controllable reconstruction of atoms in situ, which inducts a series of monodisperse 0D molybdenum carbide nanoparticles (MoxC NP) that anchor on a carbon matrix with adjustable crystalline phases and atom vacancies. Aberration‐corrected transmission electron microscopy, electron paramagnetic resonance technique, density functional theory calculation, and electron holography jointly reveal the atomic reconstruction process and confirm its remarkable effects of optimizing the local electronic states and enhancing the heterointerface interactions. As a result, the optimized MoC/Mo2C heterostructure on the carbon matrix is shown to enable the promoted dielectric response and generate more than 90% absorption of lower‐frequency microwaves (the current 5th‐generation communication band). The control of atomic reconstruction may provide an effective pathway for unlocking tunable dielectric properties of 0D nanomaterials toward various technological applications.

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A simple, reliable and field-free spin orbit torque (SOT)-induced magnetization switching is a key ingredient for the development of the electrical controllable spintronic devices. Recently, the SOT induced deterministic switching of the CoPt single layer has attracts a lot of interests, as it could simplifies the structure and add new flexibility in the design of SOT devices, compared with the Ferromagnet/Heavy metal bilayer counterparts. Unfortunately, under the field-free switching strategies used nowadays, the switching of the CoPt layer is often partial, which sets a major obstacle for the practical applications. In this study, by growing the CoPt on vicinal substrates, we could achieve the full-scale (100% switching ratio) field-free switching of the CoPt layer. We demonstrate that when grown on vicinal substrates, the magnetic easy axis of the CoPt could be tilted from the normal direction of the film plane; the strength of Dzyaloshinskii–Moriya interaction (DMI) would be also be tuned as well. Micromagnetic simulation further reveal that the field-free switching stems from tilted magnetic anisotropy induced by the vicinal substrate, while the enhancement of DMI help reducing the critical switching current. In addition, we also found that the vicinal substrates could also enhance the SOT efficiency. With such simplestructure, full-scale switching, tunable DMI and SOT efficiency, our results provide a new knob for the design SOT-MRAM and future spintronic devices.