We report the capacitance–voltage analysis of Al2O3/WS2 metal-oxide-semiconductor capacitors fabricated with mechanically exfoliated multilayer WS2 crystals. Capacitance–voltage characteristics indicated n-type conduction in WS2 with both high- and low-frequency behavior between 100 Hz and 1 MHz. Based on capacitance–voltage analysis, we reproducibly obtained electron concentration of ∼1017 cm−3 in WS2 and relatively low minimum trap density of ∼1011–1012 eV−1 cm−2 at Al2O3/WS2 interface. We also observed low dispersion of accumulation capacitance with respect to frequency suggesting relatively low interface trap density. These results provide potentially important implications for using Al2O3/WS2 gate stack validating the usefulness of capacitance–voltage measurement in understanding device operation of WS2 and other transition metal dichalcogenides.
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