2022
DOI: 10.1016/j.mee.2022.111709
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Performance enhancement of WS2 transistors via double annealing

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Cited by 2 publications
(1 citation statement)
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“…3,4 The structure consists of repeating three-atom thick layers consisting of transition metal atoms sandwiched between two layers of chalcogen atoms, with an overall formula of MX 2 , where M = transition metal and X = chalcogen. 5,6 Group 6 TMDs have received considerable attention due to their potential applications in the areas of microelectronics, 7,8 photodetection, 9,10 catalysis, 11,12 and gas sensing. 13,14 Tungsten disulfide (WS 2 ) is a promising member of this family which has been proposed for applications such as catalysis, 15 photodetection, 16 microelectronics, 17 and batteries.…”
Section: Introductionmentioning
confidence: 99%
“…3,4 The structure consists of repeating three-atom thick layers consisting of transition metal atoms sandwiched between two layers of chalcogen atoms, with an overall formula of MX 2 , where M = transition metal and X = chalcogen. 5,6 Group 6 TMDs have received considerable attention due to their potential applications in the areas of microelectronics, 7,8 photodetection, 9,10 catalysis, 11,12 and gas sensing. 13,14 Tungsten disulfide (WS 2 ) is a promising member of this family which has been proposed for applications such as catalysis, 15 photodetection, 16 microelectronics, 17 and batteries.…”
Section: Introductionmentioning
confidence: 99%