Freestanding MoS2 nanosheets with different sizes were prepared through a simple exfoliated method by tuning the ultrasonic time in the organic solvent. Magnetic measurement results reveal the clear room-temperature ferromagnetism for all the MoS2 nanosheets, in contrast to the pristine MoS2 in its bulk form which shows diamagnetism only. Furthermore, results indicate that the saturation magnetizations of the nanosheets increase as the size decreases. Combining the X-ray photoelectron spectroscopy, transmission electron microscopy, and electron spin resonance results, it is suggested that the observed magnetization is related to the presence of edge spins on the edges of the nanosheets. These MoS2 nanosheets may find applications in nanodevices and spintronics by controlling the edge structures.

In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons.Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.

Ultrathin metal-free g-C3N4 nanosheets with intrinsic room temperature ferromagnetism were synthesized by heating urea in an airtight container at different temperatures. Results indicate that the samples' saturation magnetization increases with the carbon defect concentration, revealing its carbon defect related ferromagnetism. Moreover, we further confirmed the defect induced ferromagnetic nature by ab initio calculations. It is believed that this finding highlights a new promising material toward realistic metal-free spintronic application.

Since the graphitic carbon nitride (g-C4N3), which can be seen as C-doped graphitic-C3N4 (g-C3N4), was reported to display ferromagnetic ground state and intrinsic half-metallicity (Du et al., PRL,108,197207,2012), it has attracted numerous research interest to tune the electronic structure and magnetic properties of g-C3N4 due to their potential applications in spintronic devices. In this paper, we reported the experimentally achieving of high temperature ferromagnetism in metal-free ultrathin g-C3N4 nanosheets by introducing of B atoms. Further, first-principles calculation results revealed that the current flow in such a system was fully spin-polarized and the magnetic moment was mainly attributed to the p orbital of N atoms in B doped g-C3N4 monolayer, giving the theoretic evidence of the ferromagnetism and half-metallicity. Our finding provided a new perspective for B doped g-C3N4 spintronic devices in future.

A material exhibiting a negative Poisson's ratio is always one of the leading topics in materials science, which is due to the potential applications in those special areas such as defence and medicine. In this letter, we demonstrate a new material, few-layer orthorhombic arsenic, also possesses the negative Poisson's ratio. For monolayer arsenic, the negative Poisson's ratio is predicted to be around -0.09, originated from the hinge-like structure within the single layer of arsenic. When the layer increases, the negative Poisson's ratio becomes more negative and finally approaches the limit at four-layer, which is very close to the bulk's value of -0.12. The underlying mechanism is proposed for this layer-dependent negative Poisson's ratio, where the internal bond lengths as well as the normal Poisson's ratio within layer play a key role. The study like ours sheds new light on the physics of negative Poisson's ratio in those hinge-like nano-materials.