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2015
DOI: 10.7567/apex.8.055201
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Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

Abstract: In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons.Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisot… Show more

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Cited by 136 publications
(131 citation statements)
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“…In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of carbon phosphide (CP) monolayer consisted of sp 2 hybridized C atoms and sp the gapless nature of group IV monolayers is one of the major obstacles for their applications in transistors. Recently, the group V elemental monolayers such as phosphorene 5,6 , arsenene 7,8 and antimonene 9,10 were established as promising 2D materials with electronic properties which are significantly different from those of the group IV elemental monolayers. For example, phosphorene is a direct band gap semiconductor with anisotropic electronic conductance and high hole mobility 5,11,12 .…”
Section: Introductionmentioning
confidence: 99%
“…In this paper, we present the results based on the particle swarm optimization method and density functional theory which predict three geometrically different phases of carbon phosphide (CP) monolayer consisted of sp 2 hybridized C atoms and sp the gapless nature of group IV monolayers is one of the major obstacles for their applications in transistors. Recently, the group V elemental monolayers such as phosphorene 5,6 , arsenene 7,8 and antimonene 9,10 were established as promising 2D materials with electronic properties which are significantly different from those of the group IV elemental monolayers. For example, phosphorene is a direct band gap semiconductor with anisotropic electronic conductance and high hole mobility 5,11,12 .…”
Section: Introductionmentioning
confidence: 99%
“…After the synthesis of very thin films of phosphorus [27] researchers started to seek similar structures in other group-V elements or pnictogens. Recent theoretical studies have predicted that nitrogen [28], phosphorus [29][30][31], arsenic [32][33][34][35], antimony [36][37][38][39], bismuth [40][41][42][43], and compounds of group-V elements [44] can form stable freestanding SL, planar as well as buckled honeycomb (b) structures similar to that of silicene and germanene and also other manifolds, such as SL symmetric (w) and asymmetric (aw) washboard structures, among others. These SL phases are named, respectively, nitrogene, phosphorene, arsenene, antimonene, and bismuthene.…”
Section: Introductionmentioning
confidence: 99%
“…A series of studies has explored the electronic properties of arsenene and antimonene [23][24][25][26][27][28][29][30][31][32]. Thermal transport, on the other hand, was addressed in Ref.…”
Section: Introductionmentioning
confidence: 99%