A high quality ammonium oxofluorotitanate discoid crystal is grown on glass with an aqueous solution of ammonium hexafluorotitanate and boric acid in this study. The glass acts as a scavenger to enhance the nucleation of ammonium oxofluorotitanate crystal, and the growth evolution is examined. The composition and structure are examined by Raman spectroscopy, Fourier-transform infrared spectrometry, x-ray diffraction and high-resolution transmission electron microscopy. The discoid crystal shows high crystalline quality and composition uniformity. The energy bandgap is 3.7 eV.
The electrical characteristics of low-pressure chemical-vapor-deposited SiN x on GaN and ammonium sulfide-treated GaN substrate were investigated. Upon ammonium sulfide treatment, the leakage current densities of SiN x /GaN were reduced from 1:82 Â 10 À9 to 2 Â 10 À10 A/cm 2 and from 4:44 Â 10 À9 to 1:6 Â 10 À9 A/cm 2 under electric fields of AE1 MV/cm, respectively. The negative effective oxide charges were improved from À1:39 Â 10 13 to À4:1 Â 10 12 C/cm 2 . The ammonium sulfide treatment improves the interface and film qualities of SiN x /GaN.
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