Silicon carbide (SiC) power devices have been expected as next‐generation power‐saving devices. We succeeded in fabricating very large area (1 cm2) SiC Schottky barrier diodes (SBDs) with forward current of 300 A by inactivating areas including crystal defects. Heterojunction diodes with avalanche energy of over 2000 mJ/cm2 were also developed. The reliability of gate oxide films of SiC DMOSFETs was enhanced to a level that is comparable to silicon power devices by improving oxidation techniques. We succeeded in fabricating SiC trench MOSFETs with low on‐resistance (1.7 mΩ cm2). 250 °C operation of intelligent power modules (IPMs) with SiC DMOSFETs was achieved by using a new attachment technology. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

The high current SiC MOSFETs and hightemperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250 o C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.

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