The 2010 International Power Electronics Conference - ECCE ASIA - 2010
DOI: 10.1109/ipec.2010.5542036
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Large current SiC power devices for automobile applications

Abstract: The high current SiC MOSFETs and hightemperature operation IPM with SiC MOSFETs were fabricated. 300A switching in inductive load circuits was performed using a single chip SiC trench MOSFET. And 250 o C (the junction temperature of SiC DMOSFETs) operation of SiC IPMs with a new high-temperature bonding method and high-temperature materials (case, encapsulation) was successfully performed.

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Cited by 26 publications
(15 citation statements)
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“…The selected converter topologies are presently among the most technologically mature. Variant A is a 3-level neutral point clamped (NPC) converter topology [8] with commonly used Si IGBT devices [9,20,21], while variant B is a 2-level topology [10] with less common SiC MOSFET devices [11,22,23] (SiC devices have been used due to the required voltage rating of the devices). Figure 7 presents single phase leg arrangements of each converter topology.…”
Section: Assessment Of the Generator-side Rectifier Design Options Of With The Mtm Toolmentioning
confidence: 99%
See 1 more Smart Citation
“…The selected converter topologies are presently among the most technologically mature. Variant A is a 3-level neutral point clamped (NPC) converter topology [8] with commonly used Si IGBT devices [9,20,21], while variant B is a 2-level topology [10] with less common SiC MOSFET devices [11,22,23] (SiC devices have been used due to the required voltage rating of the devices). Figure 7 presents single phase leg arrangements of each converter topology.…”
Section: Assessment Of the Generator-side Rectifier Design Options Of With The Mtm Toolmentioning
confidence: 99%
“…The paper demonstrates the use of the MTM on an example MEE/MEA power system, where the tool is used to evaluate two separate power converter design variants, from [7], of the generatorside active rectifier. The first variant considers 3-level converter topology [8] with Si IGBTs [9], while the second variant considers 2level converter topology [10] with SiC MOSFETs [11]. In each variant, the evaluation includes the comparison of two hardware components and four switching control algorithms in order to identify optimal design options.…”
Section: Introductionmentioning
confidence: 99%
“…Then HV, MV, and LV cell can be composed of power devices rated at 6.5 kV, 2.5 kV, and 1.2 kV in blocking voltage, respectively. The LV cells operating with PWM can increase their switching frequency or reduce their switching loss by applying up-to-date 1.2-kV SiC-JFET [14] or SiC-MOSFETs [15], [16].…”
Section: Output Voltage Waveforms Of Each Cell In the Multi-voltagementioning
confidence: 99%
“…Generally, in automobile applications, high current (>100A) power devices and high-temperature operation are needed. In [14], a 4H-SiC planer MOSFETs with high blocking voltage (1.3kV) and relatively large current (40A) have been developed for automotive applications. In addition, they have succeeded in fabricating the larger current (300A) 4H-SiC trench MOSFET with low-on resistance (2.6mΩcm 2 ).…”
Section: )mentioning
confidence: 99%