Mg-based multilayers, including SiC/Mg, Co/Mg, B(4)C/Mg, and Si/Mg, are investigated for solar imaging and a He II calibration lamp at a 30.4 nm wavelength. These multilayers were fabricated by a magnetron sputtering method and characterized by x-ray reflection. The reflectivities of these multilayers were measured by synchrotron radiation. Near-normal-incidence reflectivities of Co/Mg and SiC/Mg multilayer mirrors are as high as 40.3% and 44.6%, respectively, while those of B(4)C/Mg and Si/Mg mirrors are too low for application. The measured results suggest that SiC/Mg, Co/Mg multilayers are promising for a 30.4 nm wavelength.
The growth of SrMnO 3 films on SrTiO 3 (111) substrates by pulsed laser deposition was studied and found to produce cubic and hexagonal (4H) structures in the SrMnO 3 films. By adjusting the substrate temperature and oxygen pressure, the stability of the two phases was fine-tuned, resulting in the growth of cubic-SrMnO 3 (111) or 4H-SrMnO 3 (0001) film, with the 4H phase being the more stable at room temperature and ambient pressure in the bulk form. The growth temperature of the cubic phase was also further lowered relative to the bulk thermodynamics by strain at the heterointerface, and once obtained, it was stable at temperatures of up to 800 • C.
We present the results of an optical and chemical, depth and surface study of Al/Mo/SiC periodic multilayers, designed as high reflectivity coatings for the extreme ultra-violet (EUV) range. In comparison to the previously studied Al/SiC system, the introduction of Mo as a third material in the multilayer structure allows us to decrease In comparison to the previously studied Al/SiC system with a reflectance of 37% at near normal incidence around 17 nm, the introduction of Mo as a third material in the multilayer structure allows us to decrease the interfacial roughness and achieve an EUV reflectivity of 53.4%, measured with synchrotron radiation. This is the first report of a reflectivity higher than 50% around 17 nm. Time-of-flight secondary ion mass spectrometry (ToF-SIMS) and x-ray photoelectron spectroscopy (XPS) measurements are performed on the Al/Mo/SiC system in order to analyze the individual layers within the stack. ToF-SIMS and XPS results give evidence that the first SiC layer is partially oxidized, but the O atoms do not reach the first Mo and Al layers. We use these results to properly describe the multilayer stack and discuss the possible reasons for the difference between the measured and simulated EUV reflectivity values.
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