We present results for the transfer characteristics of carbon nanotube thin-film transistors (CNT-TFTs) that utilize single-walled carbon nanotube thin-films prepared by direct spray-coating on the substrate. By varying the number of spray-coatings (N(sp)) and the concentration of nanotubes in solution (C(NT)), it was possible to control the conductivity of the spray-coated nanotube thin-film from 129 to 0.1 kΩ/□. Also, by introducing stripes into the channel of the CNT-TFT, and thereby reducing the number of metallic percolation paths between source and drain, it was possible to enhance the on/off current ratio 1000-fold, from 10 to 10(4), demonstrating that it may be possible to utilize spray-coating as a method to fabricate CNT-TFTs for large area switching array applications.
Reported herein are the fabrication and demonstration of a flexible and transparent touch sensor using carbon nanotube thin films (CNTFs). The CNTF was fabricated by vacuum filtration and was transferred CNTF to polydimethylsiloxane (PDMS) by water-assisted stamping method. The sheet resistance of the CNTF decreased by approximately 74% after HNO3 treatment. The CNTF touch sensor was fabricated similarly to the conventional four-wire touch screen structures. PDMS was used for the upper plate to absorb the tensile and compressive strain and polyethylene terephthalate (PET) for the lower plate to provide device stability during bending action. The CNTF touch sensor showed high optical transmittance (over 80%) and high sensitivity with the measured touch activation pressure of 23 kPa. Cyclic pressure (38 kPa) was applied at 0.5 Hz and good repeatability was found for several hundred cycles. The results show that the CNTF flexible touch sensor can be applied to future flexible electronic interfaces such as, e-paper and flexible displays.
Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at 95 o C for 5 hr by hydrothermal method with concentrations of Zn(NO 3 ) 2 ·6H 2 O [ZNH] and (CH 2 ) 6 N 4 [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of Zn ++ in the 0.02 M precursor.
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