Surface grating couplers are fundamental components in chip-based photonic devices to couple light between photonic integrated circuits and optical fibers. In this work, we report on a grating coupler with sub-decibel experimental coupling efficiency using a single etch process in a standard 220-nm silicon-on-insulator (SOI) platform. We specifically demonstrate a subwavelength metamaterial refractive index engineered nanostructure with backside metal reflector, with the measured peak fiber-chip coupling efficiency of -0.69 dB (85.3%) and 3 dB bandwidth of 60 nm. This is the highest coupling efficiency hitherto experimentally achieved for a surface grating coupler implemented in 220-nm SOI platform.

Grating couplers are key elements enabling the coupling of light between planar waveguide circuits and optical fibers. In this work, it is demonstrated using simulations and experiments that a high coupling efficiency can be achieved for an arbitrary buried oxide thickness by judicious adjustment of the grating radiation angle. The coupler strength is engineered by subwavelength structure, allowing straightforward apodization and single etch step fabrication. The design has been implemented using Fourier-eigenmode expansion and finite difference time domain methods. The measured coupling loss of a continuously apodized grating is −2.16 dB with a 3 dB bandwidth of 64 nm, therefore opening promising prospects for low-cost and high-volume fabrication using 193 nm deep-ultraviolet lithography. It is also shown by simulations that a coupling loss as low as −0.42 dB is predicted for a modified coupler structure with bottom mirror.

We present the first experimental demonstration of a new fiber-chip grating coupler concept that exploits the blazing effect by interleaving the standard full (220 nm) and shallow etch (70 nm) trenches in a 220 nm thick silicon layer. The high directionality is obtained by controlling the separation between the deep and shallow trenches to achieve constructive interference in the upward direction and destructive interference toward the silicon substrate. Utilizing this concept, the grating directionality can be maximized independent of the bottom oxide thickness. The coupler also includes a subwavelength-engineered index-matching region, designed to reduce the reflectivity at the interface between the injection waveguide and the grating. We report a measured fiber-chip coupling efficiency of -1.3  dB, the highest coupling efficiency achieved to date for a surface grating coupler in a 220 nm silicon-on-insulator platform fabricated in a conventional dual-etch process without high-index overlays or bottom mirrors.

Fiber-chip edge couplers are extensively used in integrated optics for coupling of light between planar waveguide circuits and optical fibers. In this work, we report on a new fiber-chip edge coupler concept with large mode size for silicon photonic wire waveguides. The coupler allows direct coupling with conventional cleaved optical fibers with large mode size while circumventing the need for lensed fibers. The coupler is designed for 220 nm silicon-on-insulator (SOI) platform. It exhibits an overall coupling efficiency exceeding 90%, as independently confirmed by 3D Finite-Difference Time-Domain (FDTD) and fully vectorial 3D Eigenmode Expansion (EME) calculations. We present two specific coupler designs, namely for a high numerical aperture single mode optical fiber with 6 µm mode field diameter (MFD) and a standard SMF-28 fiber with 10.4 µm MFD. An important advantage of our coupler concept is the ability to expand the mode at the chip edge without leading to high substrate leakage losses through buried oxide (BOX), which in our design is set to 3 µm. This remarkable feature is achieved by implementing in the SiO upper cladding thin high-index SiN layers. The SiN layers increase the effective refractive index of the upper cladding near the facet. The index is controlled along the taper by subwavelength refractive index engineering to facilitate adiabatic mode transformation to the silicon wire waveguide while the Si-wire waveguide is inversely tapered along the coupler. The mode overlap optimization at the chip facet is carried out with a full vectorial mode solver. The mode transformation along the coupler is studied using 3D-FDTD simulations and with fully-vectorial 3D-EME calculations. The couplers are optimized for operating with transverse electric (TE) polarization and the operating wavelength is centered at 1.55 µm.

Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous. Abstract:We report, for the first time, on the design and experimental demonstration of fiber-chip surface grating couplers based on subwavelength grating engineered nanostructure operating in the low fiber chromatic dispersion window (around 1.3 m wavelengths), which is of great interest for short-reach data communication applications. Our coupler designs meet the minimum feature size requirements of large-volume deepultraviolet stepper lithography processes. The fiber-chip couplers are implemented in a standard 220-nm-thick silicon-on-insulator (SOI) platform and are fabricated by using a single etch process. Several types of couplers are presented, specifically the uniform, the apodized, and the focusing designs. The measured peak coupling efficiency is −2.5 dB (56%) near the central wavelength of 1.3 m. In addition, by utilizing the technique of the backside substrate metallization underneath the grating couplers, the coupling efficiency of up to −0.5 dB (89%) is predicted by Finite Difference Time Domain (FDTD) calculations. 4190-4193 (2015).