It is understood that defects of the atomic arrangement of the lattice in 2D molybdenum disulfide (MoS 2 ) grown by chemical vapor deposition (CVD) can have a profound effect on the electronic and optical properties. Beyond these it is a major prerequisite to also understand the fundamental effect of such defects on phonon transport, to guarantee the successful integration of MoS 2 into the solid-state devices. A comprehensive joint experiment-theory investigation to explore the effect of lattice defects on the thermal transport of the suspended MoS 2 monolayer grown by CVD is presented. The measured room temperature thermal conductivity values are 30 ± 3.3 and 35.5 ± 3 W m −1 K −1 for two samples, which are more than two times smaller than that of their exfoliated counterpart. High-resolution transmission electron microscopy shows that these CVD-grown samples are polycrystalline in nature with low angle grain boundaries, which is primarily responsible for their reduced thermal conductivity. Higher degree of polycrystallinity and aging effects also result in smoother temperature dependency of thermal conductivity (κ) at temperatures below 100 K. First-principles lattice dynamics simulations are carried out to understand the role of defects such as isotopes, vacancies, and grain boundaries on the phonon scattering rates of our CVD-grown samples.
The intercalation-induced phase transition of MoS2 from the semiconducting 2H to the semimetallic 1T' phase has been studied in detail for nearly a decade; however, the effects of a heterointerface between MoS2 and other two-dimensional (2D) crystals on the phase transition have largely been overlooked. Here, ab initio calculations show that intercalating Li at a MoS2hexagonal boron nitride (hBN) interface stabilizes the 1T phase over the 2H phase of MoS2 by ~ 100 mJ m -2 , suggesting that encapsulating MoS2 with hBN may lower the electrochemical energy needed for the intercalation-induced phase transition. However, in situ Raman spectroscopy of hBN-MoS2-hBN heterostructures during electrochemical intercalation of Li + shows that the phase transition occurs at the same applied voltage for the heterostructure as for bare MoS2. We hypothesize that the predicted thermodynamic stabilization of the 1T'-MoS2-hBN interface is counteracted by an energy barrier to the phase transition imposed by the steric hindrance of the heterointerface. The phase transition occurs at lower applied voltages upon heating the heterostructure, which supports our hypothesis. Our study highlights that interfacial effects of 2D heterostructures can go beyond modulating electrical properties and can modify electrochemical and phase transition behaviors. Main TextVan der Waals heterostructures comprised of different two-dimensional (2D) materials 1,2 can exhibit novel electronic and optical properties [3][4][5] , in which the effect of heterointerfaces is important. Heterointerfaces may also play a central role in determining electrochemical properties and phase transitions of 2D materials. For MoS2, intercalation of alkali metal ions such as Li + into
Surface functionalization with organic electron donors (OEDs) is an effective doping strategy for 2D materials, which can achieve doping levels beyond those possible with conventional electric field gating. While the effectiveness of surface functionalization has been demonstrated in many 2D systems, the doping efficiencies of OEDs have largely been unmeasured, which is in stark contrast to their precision syntheses and tailored redox potentials. Here, using monolayer MoS2 as a model system and an organic reductant based on 4,4′‐bipyridine (DMAP‐OED) as a strong organic dopant, it is established that the doping efficiency of DMAP‐OED to MoS2 is in the range of 0.63 to 1.26 electrons per molecule. The highest doping levels to date are also achieved in monolayer MoS2 by surface functionalization and demonstrate that DMAP‐OED is a stronger dopant than benzyl viologen, which is the previous best OED dopant. The measured range of the doping efficiency is in good agreement with the values predicted from first‐principles calculations. This work provides a basis for the rational design of OEDs for high‐level doping of 2D materials.
Silicon, although widely used in modern electronic devices, has not yet been implemented in thermoelectric applications mainly due to its high thermal conductivity, κ, which leads to an extremely low thermoelectric energy conversion efficiency (figure of merit). Here, we present an approach to manage κ of Si thin-film-based nanoarchitectures through the formation of radial and planar Si/SiO hybrid nanomembrane superlattices (HNMSLs). For the radial Si/SiO HNMSLs with various numbers of windings (1, 2, and 5 windings), we observe a continuous reduction in κ with increasing number of windings. Meanwhile, the planar Si/SiO HNMSL, which is fabricated by mechanically compressing a five-windings rolled-up microtube, shows the smallest in-plane thermal conductivity among all the reported values for Si-based superlattices. A theoretical model proposed within the framework of the Born-von Karman lattice dynamics to quantitatively interpret the experimental data indicates that the thermal conductivity of Si/SiO HNMSLs is to a great extent determined by the phonon processes in the SiO layers.
Owing to the small energy differences between its polymorphs, MoTe2 can access a full spectrum of electronic states, from the 2H semiconducting state to the 1T′ semimetallic state, and from the Td Weyl semimetallic state to the superconducting state in the 1T′ and Td phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe2 and its potential applications require large-area MoTe2 thin films with high crystallinity and thickness control. Here, we present cm 2 -scale synthesis of 2H-MoTe2 thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoOx thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor-substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe2 films: MoTe2 grown on sapphire show uniform films while MoTe2 grown on amorphous SiO2 substrates form islands. This synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results, and is applicable to grow other transition metal dichalcogenides with layer control.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.