( 1 − x ) Bi Fe O 3 – x Pb Ti O 3 (0.5<x<0.3) thin films have been reported to exhibit high remanent polarizations but device integration is hindered by the presence of leakage currents. An insight into the nature of leakage mechanisms in the films is presented. Films with x=0.4 and 0.5 exhibit lower leakage currents as compared to x=0.3 films. At applied fields above 190kVcm−1, in the region of the coercive field of these films, x=0.4 and 0.5 exhibit a Poole–Frenkel mechanism while films with x=0.3 exhibit a combination of space charge limited current and the Schottky effect.
Bismuth ferrite–lead titanate thin films in the region of the morphotropic phase boundary, with compositions of (1−x)BiFeO3–xPbTiO3 (0.3<x<0.5), were prepared by pulsed laser deposition on Pt∕Si substrates. X-ray diffraction confirmed the formation of pure perovskite phase at a substrate temperature of 565°C under 75mTorr of oxygen. The films exhibit remanent polarizations with 2Pr up to 100μCcm−2 for a field amplitude of 820kVcm−1 and switchable polarization up to 80μCcm−2.
In this work we report on the preparation and properties of bismuth ferrite lead titanate films [(1- x)BiFeO(3-x)PbTiO3] with tetragonal compositions (x = 0.8 and 0.7) and compare them with compositions close to the morphotropic phase boundary (MPB; x = 0.4 and 0.3). The films were prepared by pulsed laser deposition on Pt/Si substrates, and exhibited a dense columnar grain growth. X-ray diffraction analysis revealed that the films have a perovskite structure with a preferred (111) texture. The dielectric properties, polarization-field hysteresis, and leakage current behavior of the films is also reported. For MPB compositions, the films exhibited remanent polarizations with 2Pr up to 100 microC cm(-2) and E(c) approximately 185 kV cm(-1) under a maximum applied field of 500 kV cm(-1), while the tetragonal compositions exhibited 2Pr values in the range of 45-52 microC cm(-2) with a coercive field E(c) approximately 118 kV (-1).
High-throughput synthesis of the ferroelectric solid solution Pb(Zr1−xTix)O3 (PZT) on single Pt∕Ti∕SiO2∕Si substrates was demonstrated using a modified molecular beam epitaxy (MBE) system. The PZT films exhibited a phase transition from rhombohehdral to tetragonal symmetry as a function of Zr:Ti ratio, across the substrate diagonal. This was consistent with the presence of a morphotropic phase boundary at Zr:Ti ratio of 0.64:0.36, different from the value of 0.53:0.47 observed for bulk ceramics. All points on the films exhibited ferroelectric hysteresis. Results demonstrate the feasibility of high-throughput MBE for deposition of complex ferroelectric oxides, and pave the way for further materials discovery.
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