Large remanent polarization in ferroelectric BiFeO3–PbTiO3 thin films on Pt∕Si substrates

Abstract

Bismuth ferrite–lead titanate thin films in the region of the morphotropic phase boundary, with compositions of (1−x)BiFeO3–xPbTiO3 (0.3<x<0.5), were prepared by pulsed laser deposition on Pt∕Si substrates. X-ray diffraction confirmed the formation of pure perovskite phase at a substrate temperature of 565°C under 75mTorr of oxygen. The films exhibit remanent polarizations with 2Pr up to 100μCcm−2 for a field amplitude of 820kVcm−1 and switchable polarization up to 80μCcm−2.

Effect of tetragonal distortion on ferroelectric domain switching: A case study on La-doped BiFeO3–PbTiO3 ceramics

“…Even though these compositions do not show significant strain and polarization, they will still be considered as ferroelectric materials in this study, as they belong to a polar symmetry group. This is in accordance with literature 9,10,20,[25][26][27] that reports on the existence of ferroelectric domains and domain reversal at extremely high fields even for low La content. When the concentration of La reaches 10 at %, there is a drastic enhancement both in polarization and strain values.…”

Low-temperature fabrication and properties of the highly oriented Bi3.15Nd0.85Ti3O12 thin films deposited on different substrates

“…There are two types of FRAMs. One is the commercially available 1T1C type, where the data are memorized in a metal-ferroelectric-metal (MFM) capacitor [3]. The other is the 1T or transistor type.…”

Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films

“…However, most studies on thin films have only been relevant to structure and ferroelectric properties at room temperature or lower temperature. 12,15,22 Studies on high temperature performance are very rare. Therefore, it is necessary to investigate the temperature dependence of ferroelectric property of thin films.…”