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In this work, a significant improvement of the classical silicon nanowire (SiNW)-based photodetector was achieved through the realization of core-shell structures using newly designed GQDs via simple solution processing. The poly(ethyleneimine) (PEI)-assisted synthesis successfully tuned both optical and electrical properties of graphene quantum dots (GQDs) to fulfill the requirements for strong yellow photoluminescence emission along with large band gap formation and the introduction of electronic states inside the band gap. The fabrication of a GQD-based device was followed by systematic structural and photoelectronic investigation. Thus, the GQD/SiNW photodetector exhibited a large photocurrent to dark current ratio (I/I up to ∼0.9 × 10 under 4 V bias) and a remarkable improvement of the external quantum efficiency values that far exceed 100%. In this frame, GQDs demonstrate the ability to arbitrate both charge-carrier photogeneration and transport inside a heterojunction, leading to simultaneous attendance of various mechanisms: (i) efficient suppression of the dark current governed by the type I alignment in energy levels, (ii) charge photomultiplication determined by the presence of the PEI-induced electron trap levels, and (iii) broadband ultraviolet-to-visible downconversion effects.

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The challenge for conformal modification of the ultra-high internal surface of nanoporous silicon was tackled by electrochemical polymerisation of 2,6-dihydroxynaphthalene using cyclic voltammetry or potentiometry and, notably, after the thermal treatment (800 °C, N2, 4 h) an assembly of interconnected networks of graphene strongly adhering to nanoporous silicon matrix resulted. Herein we demonstrate the achievement of an easy scalable technology for solid state supercapacitors on silicon, with excellent electrochemical properties. Accordingly, our symmetric supercapacitors (SSC) showed remarkable performance characteristics, comparable to many of the best high-power and/or high-energy carbon-based supercapacitors, their figures of merit matching under battery-like supercapacitor behaviour. Furthermore, the devices displayed high specific capacity values along with enhanced capacity retention even at ultra-high rates for voltage sweep, 5 V/s, or discharge current density, 100 A/g, respectively. The cycling stability tests performed at relatively high discharge current density of 10 A/g indicated good capacity retention, with a superior performance demonstrated for the electrodes obtained under cyclic voltammetry approach, which may be ascribed on the one hand to a better coverage of the porous silicon substrate and, on the other hand, to an improved resilience of the hybrid electrode to pore clogging.

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Abstract:© Versita Sp. z o.o. Growth processes of nanocomposite layers obtained by polyelectrolytes, poly(sodium 4-styrenesulfonate) (PSS) and poly(diallyldimethylammonium chloride) (PDADMAC), self-assembled on silicon surface using layer-by-layer (LbL) technique were investigated, and theoretical and experimental data are herein reported. Complementary microstructural and compositional analyses techniques (scanning electron microscopy, ellipsometry, X-ray reflectivity, zeta (ζ) potential measurements and attenuated total reflection infrared spectroscopy) were used for deep characterization of the multilayer structure formation. Electrophoretic zeta (ζ) potential measurements indicated that the surface charge was either positive or negative, depending on the polyelectrolyte used (PDADMAC or PSS). ATR-IR spectra confirmed the successfully silanization process and then, the building up of the nanocomposite layer. Morphological investigation and X-ray reflectivity demonstrated the growth process and cross-section size of the bilayers. Ellipsometric measurements were in very good agreement with SEM and XRR, showing once again the successful deposition of polyelectrolyte multilayers.