Photocarrier recombination dynamics in ternary chalcogenide CuInS2 quantum dots (CIS QDs) was studied by means of femtosecond transient-absorption (TA) and nanosecond time-resolved photoluminescence (PL) spectroscopy. Under strong excitation, the TA dynamics in CIS QDs is well described by a simple rate equation including single-carrier trapping, free-to-bound recombination, and trap-assisted Auger recombination. Under weak excitation, on the other hand, the PL decays of the QDs are composed of a short-lived component caused by surface trapping and a long-lived one caused by free-to-bound recombination. It is found that the surface trapping accelerates markedly with decreasing QD size while the free-to-bound radiative recombination hardly depends on the QD size. Besides this, we observed both a decrease in the PL lifetimes and a dynamic spectral redshift, which are attributed to the surface trapping and the coexistent inhomogeneous broadening in CIS QDs. The spectral redshift becomes less pronounced in CIS/ZnS core/shell QDs because of the suppression of the fast nonradiative recombination caused by the passivation of the surface traps. These results give clear evidence that the free-to-bound model is appropriate for interpreting the optical properties of CIS QDs.
Light-induced orientation of electron spins in the negatively charged InP quantum dots is found to persist longer than 100 s. We have proved experimentally that the long-lived orientation is due to slow relaxation of the electron spins rather than to the dynamic nuclear polarization effects.
The ultrafast carrier dynamics in CuInS2 (CIS) quantum dots (QDs) was studied by means of femtosecond transient absorption (TA) spectroscopy. The size-dependent 1S transition energy determined from bleaching spectra is in agreement with that calculated on the finite-depth-well model in the effective mass approximation. The TA bleaching comes from filling of electron quantized levels, allowing us to know the dynamics of the 1S electron in CIS QDs. The sub-100-ps electron trapping at surface defects in bare QDs accelerates with decreasing QD size, while is effectively suppressed in well-passivated CIS/ZnS core/shell QDs.
Luminescence from single isoelectronic traps in nitrogen -doped gallium phosphide was studied by micro-photoluminescence spectroscopy. These single traps were found to emit photons that were nearly identical in both emission energy and brightness. Furthermore, single photon emission from a single nitrogen pair is confirmed by a strong antibunching under continuous optical excitation at 30 K. These results imply that single nitrogen pairs in GaP might be useful for realizing unique sources of energetically-defined single photons, and even indistinguishable photons.
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