Single Photon Emission from Individual Nitrogen Pairs in GaP

Ikezawa, Michio; Sakuma, Yoshiki; Masumoto, Yasuaki

doi:10.1143/jjap.46.l871

Cited by 44 publications

(46 citation statements)

References 14 publications

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“…Researchers have explored a variety of material systems including cold atoms [2], trapped ions [3], colour centres in diamond [4,5], single molecules [6], nitrogen pairs in GaP [7], silicon carbide [8], layered materials [9][10][11][12][13] and semiconductor QDs [14,15]. Comparing all these sources, a semiconductor based device offers several advantages.…”

Section: Introductionmentioning

confidence: 99%

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

et al. 2016

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Unsleber, S.; Deppisch, M.; Krammel, C.M.; Vo, Minh; Yerino, C.D.; Simmonds, P.G.; Lee, Minjoo Larry; Koenraad, P.M.; Schneider, C.; Höfling, S. Published in: Optics Express DOI:10.1364/OE.24.023198Published: 03/10/2016 Document VersionPublisher's PDF, also known as Version of Record (includes final page, issue and volume numbers) Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Unsleber, S., Deppisch, M., Krammel, C. M., Vo, M., Yerino, C. D., Simmonds, P. G., ... Höfling, S. (2016). Bulk AlInAs on InP(111) as a novel material system for pure single photon emission. Optics Express, 24(20), 23198-23206. DOI: 10.1364/OE.24.023198 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Abstract: In this letter, we report on quantum light emission from bulk AlInAs grown on InP(111) substrates. We observe indium rich clusters in the bulk Al 0.48 In 0.52 As (AlInAs), resulting in quantum dot-like energetic traps for charge carriers, which are confirmed via cross-sectional scanning tunnelling microscopy (XSTM) measurements and 6-band k·p simulations. We observe quantum dot (QD)-like emission signals, which appear as sharp lines in our photoluminescence spectra at near infrared wavelengths around 860 nm, and with linewidths as narrow as 50 µeV. We demonstrate the capability of this new material system to act as an emitter of pure single photons as we extract g (2) -values as low as g

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Section: Introductionmentioning

confidence: 99%

Bulk AlInAs on InP(111) as a novel material system for pure single photon emission

et al. 2016

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“…6 Energetically defined single-photon generation has been demonstrated in highly homogeneous NN pairs in GaP. 7 The radiative lifetime of NN pairs in GaP is rather long (56 ns), 8 probably due to the indirect bandgap nature of the host material. For reliable triggered generation of single photons with short time intervals, a shorter radiative lifetime of the emitter is favorable.…”

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Single-photon generation from a nitrogen impurity center in GaAs

Ikezawa

Sakuma

Liao

et al. 2012

Applied Physics Letters

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We have demonstrated single-photon emission from a nitrogen luminescence center in GaAs. An inhomogeneously broadened luminescence band formed by localized centers was observed in the spectral range from 1480 meV to 1510 meV at 5 K in nitrogen delta-doped GaAs. Optical properties of the individual centers were investigated by steady-state and time-resolved micro photoluminescence. We have found that a bright luminescence center emits single photons with a radiative lifetime of 650 ps, which is much shorter than the lifetime of NN pairs in previous reports.

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“…6.7 Â 10 14 cm À2 , and n i,2D is the number of equivalent sites of NN i around one specific N atom in the d-doped layer [9,10]. For example, if the [N] 2D is 10 11 cm À2 , the corresponding [NN 4 ] 2D leads to 3.0 Â 10 7 cm À2 because n 4,2D ¼ 4 [14].…”

Section: Resultsmentioning

confidence: 99%

“…2, a two-dimensional distribution of each isoelectronic trap was resolved spatially [9]. In this measurement, the pinhole was removed from the setup.…”

Section: Resultsmentioning

confidence: 99%

“…Indeed, recent demonstrations of non-classical light emission from an individual nitrogen (N)-vacancy center in diamond [5,6], a single N acceptor in ZnSe [7], and an isoelectronic nearest-neighbor tellurium (Te) pair in ZnSe [8] indicate that these impurities or defect centers act as good single-photon sources. However, to date, there has been little work in demonstrating single-photon emission using doped impurities in III-V materials [9].…”

Section: Introductionmentioning

confidence: 99%

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