Photoluminescence quantum efficiency and energy transfer were studied in ErRE (RE = Y, Yb) silicate thin films. For the first time, we experimentally determined the radiative/non-radiative decay rates of ErYb and ErY silicates and obtained photoluminescence quantum efficiencies of 0.28 ± 0.08 and 0.39 ± 0.13, respectively. Energy transfer between Yb and Er in ErYb silicate was investigated by comparing the effective excitation cross sections of ErYb and ErY silicate. At different pumping wavelengths, forward and backward energy transfer caused by the presence of Yb was experimentally demonstrated.
Broadband and anisotropic light emission from rare-earth doped tellurite thin films is demonstrated using Er3+-TeO2 photonic crystals (PhCs). By adjusting the PhC parameters, photoluminescent light can be efficiently coupled into vertical surface emission or lateral waveguide propagation modes. Because of the flexibility of light projection direction, Er3+-TeO2 is a potential broadband light source for integration with three-dimensional photonic circuits and on-chip biochemical sensors.
Silicon nanocrystals (nc-Si), have been shown to act as opto-electronic centers enabling light emission by carrier recombination, when precipitated in a silicon nitride (Si3N4) host. In this work, nc-Si and Germanium nanocrystals (nc-Ge) are studied in sputtered films of Si3N4 and SiGeN for application as tandem cell layers in a Si solar cell. The samples are annealed in a nitrogen gas and forming gas ambient, from 500 ºC to 900 ºC, to investigate the influence of temperature on photoluminescence and photoconductivity.
Sensitization of erbium by ytterbium in Er x Yb 2-x SiO 5 thin films at 980nm optical excitation is demonstrated by means of comparison of the 1.54µm photoluminescence intensities excited with 488nm and 980nm light. Additionally, it is shown that detrimental Er-Er interactions such as concentration quenching increase non-radiative decay rates at high erbium concentrations. Dilution of erbium by ytterbium reduces these interactions, leading to an increase of internal quantum efficiency.
The structural and photoluminescence properties of ytterbium-erbium silicate thin films have been investigated. The films were fabricated by RFmagnetron co-sputtering of Er 2 O 3 , Yb 2 O 3 and SiO 2 on c-Si and subsequent annealing in N 2 or O 2 atmosphere.
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