Photoluminescence quantum efficiency and energy transfer of ErRE silicate (RE = Y, Yb) thin films

Wang, B; Wang, X J; Dood, M. J. A. de; Guo, Ruyan; Wang, L; Vanhoutte, Michiel; Michel, Jürgen; Kimerling, L.C.; Zhou, Zhen

doi:10.1088/0022-3727/45/16/165101

Cited by 8 publications

(8 citation statements)

References 30 publications

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“…The low refractive index difference between EYCS (n = 1.68 22 23 24 ,) and the SiO 2 substrate (n = 1.4) or air (n = 1.0) induces a very low limiting factor and there exists large leakage loss to the substrate or air. To enhance the limiting factor, several ways can be adopted.…”

Section: Resultsmentioning

confidence: 99%

Room-temperature near-infrared up-conversion lasing in single-crystal Er-Y chloride silicate nanowires

Rui

Wang

et al. 2016

Sci Rep

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Near-infrared up-conversion lasing in erbium(Er)-yttrium(Y) chloride silicate nanowires was demonstrated when pumped by 1476 nm laser at room temperature. The emission covers a very wide wavelength range (400–1000 nm). A clear threshold for 985 nm peak was observed at a launched average pump power of approximately 7 mW. Above threshold, the intensity increases linearly when turning up the pump power. The full width at half maximum at 985 nm decreases from 1.25 nm to 0.25 nm when reducing the measurement temperature from 30 K to 7 K, which is the narrowest linewidth of 980 nm micro-lasers to date. Our demonstration presents a possible novel method of utilizing up-conversion mechanism in Er-Y nanowire to achieve tunable near-infrared laser, which breaks new ground in the exploration of nanoscale optoelectronic devices operating at near-infrared wavelength.

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Section: Resultsmentioning

confidence: 99%

Room-temperature near-infrared up-conversion lasing in single-crystal Er-Y chloride silicate nanowires

Rui

Wang

et al. 2016

Sci Rep

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“…1.53-µm electroluminescence in ErYb silicates was also realized using hot carriers' impact excitations of Er ions. The current conduction behavior, electroluminescence (EL) emissions, and impact excitation cross sections were studied [49,50] .…”

Section: Erbium Doped Light Sourcementioning

confidence: 99%

Development trends in silicon photonics

Zhou¹,

Tu²,

Yin³

et al. 2013

中国光学快报

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Silicon photonics has become one of the major technologies in this very information age. It has been intensively pursued by researchers and entrepreneurs all over the world in recent years. Achieving the large scale silicon photonic integration, particularly monolithic integration, is the final goal so that high density data communication will become much cheaper, more reliable, and less energy consuming. Comparing with the developed countries, China may need to invest more to develop top down nanoscale integration capability (more on processing technology) to sustain the development in silicon photonics and to elevate its own industry structure.

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“…This study aims at (i) optimizing the Nd 3+ emission through variation of deposition parameters for tuning the sample composition and annealing conditions for controlling the sample microstructure, and (ii) elucidating the Nd 3+ ions excitation mechanisms correlated with composition and microstructure. This work has not only to do with waveguide applications in the case of Nd 3+ ions, but also with the REdoped Si-based systems as frequency conversion layers, see for example [21,25,26].…”

Section: Introductionmentioning

confidence: 99%

Correlation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer

Liang¹,

An²,

Wang³

et al. 2018

Nanotechnology

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Rare earth (RE) ions doped in Si-based materials, compatible with Si technology, are promising compounds with regards to optical communication and energy conversion. In this article, we show the emission properties of Nd-doped Si-rich Si oxynitride (Nd-SRSON) films, and their dependence on the dangling bond density and the nature of the sensitizer. These films were prepared by reactive magnetron sputtering and post-annealing. The film composition, microstructure, and emission properties were investigated as a function of deposition parameters and annealing temperatures. Both Fourier transform infrared (FTIR) and ellipsometry spectroscopy measurements have confirmed that the sample composition (Si/N ratio) can be carefully tuned by varying the ratio of reactive nitrogen to argon in the sputtering plasma. Moreover, FTIR and x-ray photoelectron spectroscopy measurements demonstrate the existence of both nitrogen and oxygen dangling bonds (N· and O·) in as-deposited samples. These dangling bonds were passivated during annealing. Under non-resonant excitation at 488 nm, the films exhibit a significant photoluminescence (PL) signal from Nd 3+ ions demonstrating the occurrence of an effective sensitization of Nd 3+ ions in the host matrix. Both PL excitation and ellipsometry results (the energy band gap from new amorphous model) exclude the sensitization by an exciton with energy over the band gap, whereas the presence of Si agglomerates, at the atomic scale, have been identified as effective sensitizers towards Nd 3+ ions. This work not only provides knowledge to optimize Si-based materials for favorable emission properties, but also, presents a universal methodology to investigate the nature of sensitizers for RE emitters. This allows one to find correlations between composition, microstructure, and emission properties.

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Photoluminescence quantum efficiency and energy transfer of ErRE silicate (RE = Y, Yb) thin films

Cited by 8 publications

References 30 publications

Room-temperature near-infrared up-conversion lasing in single-crystal Er-Y chloride silicate nanowires

Room-temperature near-infrared up-conversion lasing in single-crystal Er-Y chloride silicate nanowires

Development trends in silicon photonics

Correlation between composition, microstructure, and emission properties in Nd-doped Si-rich Si oxynitride films: investigation into the nature of the sensitizer

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