interface engineering, in addition to effective doping strategies involving scalable and highly precise processing technology on large areas, have been deemed necessary to advance the development of p-type oxide materials. [5] Atomic layer deposition (ALD) is a layerby-layer thin film deposition method that allows for atomic-level control over thickness and material/interface properties, resulting in conformal and uniform deposition over large areas, and high aspect ratio substrates. [9,10] Such unique features stem from the fact that ALD relies on cyclic and self-limiting chemical reactions between the substrate surface and alternating exposure to a precursor and coreactant. [11] Recently, mobilities of 0.5, 1, and 6 cm 2 V -1 s -1 and on-current/off-current (I On /I Off ) ratios of 10 4 , 10 6 , and 10 2 have been reported for SnO deposited by temporal ALD, using bis(1-dimethylamino-2-methyl-2-butoxy)tin, Sn(dmamb) 2 , bis(1-dimethylamino-2-methyl-2-propoxy)tin Sn(dmamp) 2 , and N,N′-tert-butyl-1,1-dimethylethylenediamine stannylene(II), [12][13][14] respectively, as the Sn precursor with an H 2 O coreactant. Whilst these results are promising for the development of p-type transistors by ALD, the low deposition rate of temporal ALD, coupled with the low reactivity of current precursor technology may ultimately hinder large area industrial applications. The development of high deposition rate processes (i.e., high growth per cycle (GPC) and/or short cycle time) with atomic-level control, suitable for large-area applications, are therefore of paramount importance. High-throughput ALD can be obtained by improving two major aspects of the process; i) upgrades in deposition hardware (i.e., deposition equipment and methodology), which have the potential to reduce the overall cycle time and or ii) improvement of the underpinning chemistries involved (i.e., the development of novel and chemically optimized precursors) which can increase the GPC, and shorten overall cycle time, thus increasing deposition rate by harnessing higher reactivity with the substrate surface and coreactant.In conventional temporal ALD substrates are exposed to alternate precursor and coreactant doses which are separated in time by extensive purge steps to eliminate precursor mixing and afford self-limited deposition in a cyclic fashion. In contrast to temporal ALD, spatial ALD (sALD) relies on Spatial atomic layer deposition (sALD) of p-type SnO is demonstrated using a novel liquid ALD precursor, tin(II)-bis(tert-amyloxide), Sn(TAA) 2 , and H 2 O as the coreactant in a process which shows an increased deposition rate when compared to conventional temporal ALD. Compared to previously reported temporal ALD chemistries for the deposition of SnO, deposition rates of up to 19.5 times higher are obtained using Sn(TAA) 2 as a precursor in combination with atmospheric pressure sALD. Growths per cycle of 0.55 and 0.09 Å are measured at deposition temperatures of 100 and 210 °C, respectively. Common-gate thin film transistors (TFTs), fabricated using sAL...

A series of Sn(ii) pyrrolide complexes have been synthesised, characterised and their thermal properties assessed for their potential application in the MOCVD and ALD of SnO thin films.

A series of amino alcohols and fluorinated aminoalcohols (H{ON}) having a different number of methyl/trifluoromethyl substituents at the α-carbon atom, [HOC(R1)(R2)CH2NMe2] (R1 = R2 = H (H{dmae}) (a); R1 =...