2021
DOI: 10.1039/d1dt02480a
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Evaluation of Sn(ii) aminoalkoxide precursors for atomic layer deposition of SnO thin films

Abstract: A series of amino alcohols and fluorinated aminoalcohols (H{ON}) having a different number of methyl/trifluoromethyl substituents at the α-carbon atom, [HOC(R1)(R2)CH2NMe2] (R1 = R2 = H (H{dmae}) (a); R1 =...

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Cited by 3 publications
(3 citation statements)
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“…SSPs have been reported for a variety of metal oxide thin films, often using alkoxide-based ligands to ensure low decomposition temperature and high compositional purity. 205,270–275 BaTiO 3 , BaZrO 3 , and BaTi 0.5 Zr 0.5 O 3 were developed by Veith et al via a sol–gel technique using [BaM(OH)(O i Pr) 5 (HO i Pr) 3 ] 2 (M = Ti, Zr) and [BaTi 0.5 Zr 0.5 (O i Pr) 6 ] 2 SSPs. 245 BaTiO 3 thin films were reported to be pure state at 600 °C using these precursors, whereas the equivalent films using dual-source precursors still contained many impurities at 1200 °C including BaCO 3 and Ba 2 TiO 4 .…”
Section: Precursor Design and Growth Criteria For Semiconductor Mater...mentioning
confidence: 99%
See 1 more Smart Citation
“…SSPs have been reported for a variety of metal oxide thin films, often using alkoxide-based ligands to ensure low decomposition temperature and high compositional purity. 205,270–275 BaTiO 3 , BaZrO 3 , and BaTi 0.5 Zr 0.5 O 3 were developed by Veith et al via a sol–gel technique using [BaM(OH)(O i Pr) 5 (HO i Pr) 3 ] 2 (M = Ti, Zr) and [BaTi 0.5 Zr 0.5 (O i Pr) 6 ] 2 SSPs. 245 BaTiO 3 thin films were reported to be pure state at 600 °C using these precursors, whereas the equivalent films using dual-source precursors still contained many impurities at 1200 °C including BaCO 3 and Ba 2 TiO 4 .…”
Section: Precursor Design and Growth Criteria For Semiconductor Mater...mentioning
confidence: 99%
“…SSPs have been reported for a variety of metal oxide thin films, often using alkoxidebased ligands to ensure low decomposition temperature and high compositional purity. 205,[270][271][272][273][274][275] SSPs. 245 BaTiO 3 thin films were reported to be pure state at 600 1C using these precursors, whereas the equivalent films using dual-source precursors still contained many impurities at 1200 1C including BaCO 3 and Ba 2 TiO 4 .…”
Section: Metal Oxides and Chalcogenidesmentioning
confidence: 99%
“…Tetrylenes [3][4][5][6][7]-heavier carbene analogs-have recently attracted significant attention [8][9][10][11][12][13][14][15][16][17][18][19][20]), primarily due to their possible application as analogs of transition metals in catalysis [21][22][23], in activation of small molecules [24][25][26][27][28][29][30], as ligands [31,32], in possible synthesis of derivatives with E-E bonds [33][34][35], reagents for synthesis [36][37][38][39] or precursors [40][41][42] in material chemistry. These species are reactive and unstable; to stabilize them, the introduction of bulky groups (kinetic stabilization) or polydentate ligands (thermodynamic stabilization) is used.…”
Section: Introductionmentioning
confidence: 99%