The ability to couple the in-plane (IP) and out-of-plane (OOP) dipole polarizations in ferroelectric In2Se3 makes it a promising material for multimodal memory and optoelectronic applications. Herein, we experimentally demonstrate the cross-field optoelectronic modulation in In2Se3 based field-effect devices. Surface potential measurements of In2Se3 based devices directly reveal the bidirectional dipole locking following high gate voltage pulses. The experimental evidence of hysteretic change in the IP electrical field facilitating a nonvolatile memory switch, was further explored by performing photocurrent measurements. Fabricated photodetectors presented multilevel photocurrent characteristics showing promise for nonvolatile memory and electro-optical applications.
Stable ferroelectricity at room-temperature down to the monolayer limit, harnessed with strong sensitivity towards visible-to-near-infrared illumination in α-In2Se3, facilitates its potential as versatile building block for developing ultrathin multifunctional photonic integrated networks. Herein, we demonstrated a planar ferroelectric-semiconductor heterojunction (FeS-HJ) field-effect transistor (FET) fabricated out of α-In2Se3 and In2O3, where the ferroelectric-polarization state in α-In2Se3 is utilized to control the device characteristics. The robust in-plane (IP) polarization flipping triggered by out-of-plane (OOP) electrostatic field along with clear anticlockwise hysteresis loop were readily revealed by scanning Kelvin-probe force microscopy (KPFM) and electrical probing. The orthogonally tangled ferroelectric switching was used to manipulate the HJ channel conductance and thereby to realize non-volatile memory (NVM) states. Moreover, gate-tuneable diode-like characteristics and superior photoresponse in HJ compared to its individual constitutes were observed. Utilizing the concurrent ferro-photonic coupling, high bandwidth optical inputs further tailored the outputs into four distinguished current states induced by different polarization directions. Our results pave the way for developing advanced (opto) electronic devices with diverse signal modulation capability to realize next generation low-power neurocomputing, brain-inspired visionary systems, and on-chip optical communications.
Heterostructures based on two-dimensional materials offer the possibility to achieve synergistic functionalities, which otherwise remain secluded by their individual counterparts. Herein, ferroelectric polarization switching in α-In 2 Se 3 has been utilized to engineer multilevel nonvolatile conduction states in a partially overlapping α-In 2 Se 3 −MoS 2 -based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of α-In 2 Se 3 allows to nonvolatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for subnanometric scale nonvolatile device miniaturization. Furthermore, the induced asymmetric polarization enables enhanced photogenerated carriers' separation, resulting in an extremely high photoresponse of ∼1275 A/W in the visible range and strong nonvolatile modulation of the bright A-and B-excitonic emission channels in the overlaying MoS 2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping α-In 2 Se 3 −MoS 2 based FeFETs to engineer multimodal, nonvolatile nanoscale electronic and optoelectronic devices.
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