Edge-Based Two-Dimensional α-In₂Se₃–MoS₂ Ferroelectric Field Effect Device

Abstract

Heterostructures based on two-dimensional materials offer the possibility to achieve synergistic functionalities, which otherwise remain secluded by their individual counterparts. Herein, ferroelectric polarization switching in α-In 2 Se 3 has been utilized to engineer multilevel nonvolatile conduction states in a partially overlapping α-In 2 Se 3 −MoS 2 -based ferroelectric semiconducting field effect device. In particular, we demonstrate how the intercoupled ferroelectric nature of α-In 2 Se 3 allows to nonvolatilely switch between n-i and n-i-n type junction configurations based on a novel edge state actuation mechanism, paving the way for subnanometric scale nonvolatile device miniaturization. Furthermore, the induced asymmetric polarization enables enhanced photogenerated carriers' separation, resulting in an extremely high photoresponse of ∼1275 A/W in the visible range and strong nonvolatile modulation of the bright A-and B-excitonic emission channels in the overlaying MoS 2 monolayer. Our results show significant potential to harness the switchable polarization in partially overlapping α-In 2 Se 3 −MoS 2 based FeFETs to engineer multimodal, nonvolatile nanoscale electronic and optoelectronic devices.

Recent Advances in Layered Two‐Dimensional Ferroelectrics from Material to Device

“…𝛼-In 2 Se 3 has been mostly used in recent studies on synaptic devices due to its out-of-plane and in-plane polarization coupling, which is suitable for developing multiterminal synaptic devices. [78,[99][100][101][102][103] Besides, 𝛼-In 2 Se 3 has also been further studied in reservoir computing (RC), which is a framework for computation that maps input signals into higher dimensional computational spaces through the dynamics of a fixed non-linear system very recently. [104][105][106] Compared to other recurrent neural networks, RC benefits from the following two aspects.…”

Graphene-In2Se3 van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation

“…Ferroelectric materials can be energetically promising for low-power ONN applications, as the electrically reversible, remnant polarization field can effectively modulate the channel conductance, thus emulating synaptic plasticity. − However, only a few 2D-ferroelectrics are stable at room temperature, such as CIPS, SnTe, WTe 2 , α-In 2 Se 3 , etc . Among them, α-In 2 Se 3 has drawn special attention for its in-plane (IP)–out-of-plane (OOP) dipole interlocking features. , The transverse switching mechanism offers nonconventional engineering opportunities and has gradually provided inspiration to construct a variety of conceptual functional components (e.g., programmable diodes, reconfigurable tunnel-diodes, FET for NVM, , a tunable NV photodetector, neuromorphic computation). By harnessing their synergistic photosensing properties over the visible-SWIR regime, − optically modulated programmable memory devices with electric and photonic heterosynaptic functionalities can be developed in a biorealistic fashion .…”

“…17 Among them, α-In 2 Se 3 has drawn special attention for its in-plane (IP)−outof-plane (OOP) dipole interlocking features. 18,19 The transverse switching mechanism offers nonconventional engineering opportunities 20 and has gradually provided inspiration to construct a variety of conceptual functional components (e.g., programmable diodes, 21 reconfigurable tunnel-diodes, 22 FET for NVM, 23,24 a tunable NV photodetector, 25 neuromorphic computation 26 ). By harnessing their synergistic photosensing properties over the visible-SWIR regime, 27−29 optically modulated programmable memory devices with electric and photonic heterosynaptic functionalities can be developed in a biorealistic fashion.…”

The tunneling electroresistance effect in a van der Waals ferroelectric tunnel junction based on a graphene/In2Se3/MoS2/graphene heterostructure

“…33,38 In particular, when MoS 2 forms heterostructures with In 2 Se 3 through van der Waals forces, these heterostructures exhibit a range of interesting properties, including optical, electronic, and transport characteristics. A substantial number of theoretical 39–41 and experimental 42,43 studies have been conducted on the optical properties of In 2 Se 3 /MoS 2 heterostructures in recent years. These studies have revealed important insights into the absorption and emission spectra, as well as the optical properties of the heterostructures.…”