Nonvolatile resistive memory consisting of gold nanoparticles embedded in the conducting polymer poly͑4-n-hexylphenyldiphenylamine͒ examined using admittance spectroscopy. The frequency dependence of the devices indicates space-charge-limited transport in the high-conductivity "on" state, as well as evidence for similar transport in the lower-conductivity "off" state. Furthermore, the larger dc capacitance of the on state indicates that a greater amount of filling of the midgap nanoparticle trap levels increases the overall device conductivity, leading to the memory effect.
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