We have previously shown that square arrays of three-dimensional gold helices can serve as compact broadband circular polarizers. Here, we show by heuristic reasoning supported by numerical calculations that the bandwidth of the device can realistically be increased to 1.5 octaves by tapering the gold-helix radius. The tapering also improves the extinction ratio. Depending on the side from which light impinges onto the tapered helices, the polarization conversions are different. Therefore, the structure is either optimal as polarizer or as analyzer. Corresponding structures for the infrared spectral range are fabricated by direct laser writing and gold electroplating.
The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.
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