Organic semiconductors that can be fabricated by simple processing techniques and possess excellent electrical performance, are key requirements in the progress of organic electronics. Both high semiconductor charge-carrier mobility, optimized through understanding and control of the semiconductor microstructure, and stability of the semiconductor to ambient electrochemical oxidative processes are required. We report on new semiconducting liquid-crystalline thieno[3,2-b ]thiophene polymers, the enhancement in charge-carrier mobility achieved through highly organized morphology from processing in the mesophase, and the effects of exposure to both ambient and low-humidity air on the performance of transistor devices. Relatively large crystalline domain sizes on the length scale of lithographically accessible channel lengths ( approximately 200 nm) were exhibited in thin films, thus offering the potential for fabrication of single-crystal polymer transistors. Good transistor stability under static storage and operation in a low-humidity air environment was demonstrated, with charge-carrier field-effect mobilities of 0.2-0.6 cm(2) V(-1) s(-1) achieved under nitrogen.

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This paper describes an experimentally simple system for measuring rates of electron transport across organic thin films having a range of molecular structures. The system uses a metal--insulator--metal junction based on self-assembled monolayers (SAMs); it is particularly easy to assemble. The junction consists of a SAM supported on a silver film (Ag-SAM(1)) in contact with a second SAM supported on the surface of a drop of mercury (Hg-SAM(2))--that is, a Ag-SAM(1)SAM(2)-Hg junction. SAM(1) and SAM(2) can be derived from the same or different thiols. The current that flowed across junctions with SAMs of aliphatic thiols or aromatic thiols on Ag and a SAM of hexadecane thiol on Hg depended both on the molecular structure and on the thickness of the SAM on Ag: the current density at a bias of 0.5 V ranged from 2 x 10(-10) A/cm(2) for HS(CH(2))(15)CH(3) on Ag to 1 x 10(-6) A/cm(2) for HS(CH(2))(7)CH(3) on Ag, and from 3 x 10(-6) A/cm(2) for HS(Ph)(3)H (Ph = 1,4-C(6)H(4)) on Ag to 7 x 10(-4) A/cm(2) for HSPhH on Ag. The current density increased roughly linearly with the area of contact between SAM(1) and SAM(2), and it was not different between Ag films that were 100 or 200 nm thick. The current--voltage curves were symmetrical around V = 0. The current density decreased with increasing distance between the electrodes according to the relation I = I(0)e(-beta d(Ag,Hg)), where d(Ag,Hg) is the distance between the electrodes, and beta is the structure-dependent attenuation factor for the molecules making up SAM(1). At an applied potential of 0.5 V, beta was 0.87 +/- 0.1 A(-1) for alkanethiols, 0.61 +/- 0.1 A(-1) for oligophenylene thiols, and 0.67 +/- 0.1 A(-1) for benzylic derivatives of oligophenylene thiols. The values of beta did not depend significantly on applied potential over the range of 0.1 to 1 V. These junctions provide a test bed with which to screen the intrinsic electrical properties of SAMs made up of molecules with different structures; information obtained using these junctions will be useful in correlating molecular structure and rates of electron transport.

Developing a better understanding of the evolution of morphology in plastic solar cells is the key to designing new materials and structures that achieve photoconversion efficiencies greater than 10%. In the most extensively characterized system, the poly(3‐hexyl thiophene) (P3HT):[6,6]‐phenyl‐C61‐butyric‐acid‐methyl‐ester (PCBM) bulk heterojunction, the origins and evolution of the blend morphology during processes such as thermal annealing are not well understood. In this work, we use a model system, a bilayer of P3HT and PCBM, to develop a more complete understanding of the miscibility and diffusion of PCBM within P3HT during thermal annealing. We find that PCBM aggregates and/or molecular species are miscible and mobile in disordered P3HT, without disrupting the ordered lamellar stacking of P3HT chains. The fast diffusion of PCBM into the amorphous regions of P3HT suggests the favorability of mixing in this system, opposing the belief that phase‐pure domains form in BHJs due to immiscibility of these two components.

Ternary bismuth halides form an interesting functional materials class in the context of the closely related Pb halide perovskite photovoltaics, especially given the significantly reduced toxicity of Bi when compared with Pb. The compounds A 3 Bi 2 I 9 (A = K, Rb, Cs) examined here crystallize in two different structure types: the layered defectperovskite K 3 Bi 2 I 9 type, and the Cs 3 Cr 2 Cl 9 type. The latter structure type features isolated Bi 2 I 9 3− anions. Here, the crystal structures of the ternary iodides are redetermined and a corrected structural model for Rb 3 Bi 2 I 9 , as established by single crystal X-ray diffraction and solid state 87 Rb NMR spectroscopy and supported by density functional theory (DFT) calculations is presented. A variety of facile preparation techniques for single crystals, bulk materials, as well as solution-processed thin films are described. The optical properties and electronic structures are investigated experimentally by optical absorption and ultraviolet photoemission spectroscopy and computationally by DFT calculations. Absolute band positions of the valence and conduction bands of these semiconductors, with excellent agreement of experimental and calculated values, are reported, constituting a useful input for the rational interface design of efficient electronic and optoelectronic devices. The different structural connectivity in the two different structure types, somewhat surprisingly, appears to not impact band positions or band gaps in a significant manner. Computed dielectric properties, including the finding of anomalously large Born effective charge tensors on Bi 3+ , suggest proximal structural instabilities arising from the Bi 3+ 6s 2 lone pair. These anomalous Born effective charges are promising for defect screening and effective charge carrier transport. The structural, electronic, and optical properties of the complex bismuth iodides are to some extent similar to the related lead iodide perovskites. The deeper valence band positions in the complex bismuth iodides point to the need for different choices of hole transport materials for Bi-iodide based solar cell architectures.