Developing a better understanding of the evolution of morphology in plastic solar cells is the key to designing new materials and structures that achieve photoconversion efficiencies greater than 10%. In the most extensively characterized system, the poly(3‐hexyl thiophene) (P3HT):[6,6]‐phenyl‐C61‐butyric‐acid‐methyl‐ester (PCBM) bulk heterojunction, the origins and evolution of the blend morphology during processes such as thermal annealing are not well understood. In this work, we use a model system, a bilayer of P3HT and PCBM, to develop a more complete understanding of the miscibility and diffusion of PCBM within P3HT during thermal annealing. We find that PCBM aggregates and/or molecular species are miscible and mobile in disordered P3HT, without disrupting the ordered lamellar stacking of P3HT chains. The fast diffusion of PCBM into the amorphous regions of P3HT suggests the favorability of mixing in this system, opposing the belief that phase‐pure domains form in BHJs due to immiscibility of these two components.

High mobility thin‐film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin‐film transistors is reported that exploits the enhanced electron transport properties of low‐dimensional polycrystalline heterojunctions and quasi‐superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band‐like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature‐dependent electron transport and capacitance‐voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas‐like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll‐to‐roll, etc.) and can be seen as an extremely promising technology for application in next‐generation large area optoelectronics such as ultrahigh definition optical displays and large‐area microelectronics where high performance is a key requirement.

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The improvement of the power conversion efficiency (PCE) of polymer bulk heterojunction (BHJ) solar cells has generally been achieved through synthetic design to control frontier molecular orbital energies and molecular ordering of the electron-donating polymer. An alternate approach to control the PCE of a BHJ is to tune the miscibility of the fullerene and a semiconducting polymer by varying the structure of the fullerene. The miscibility of a series of 1,4-fullerene adducts in the semiconducting polymer, poly(3-hexylselenophene), P3HS, was measured by dynamic secondary ion mass spectrometry using a model bilayer structure. The microstructure of the bilayer was investigated using high-angle annular dark-field scanning transmission microscopy and linked to the polymer-fullerene miscibility. Finally, P3HS:fullerene BHJ solar cells were fabricated from each fullerene derivative, enabling the correlation of the active layer microstructure to the charge collection efficiency and resulting PCE of each system. The volume fraction of polymer-rich, fullerene-rich, and polymer-fullerene mixed domains can be tuned using the miscibility leading to improvement in the charge collection efficiency and PCE in P3HS:fullerene BHJ solar cells. These results suggest a rational approach to the design of fullerenes for improved BHJ solar cells.

We directly image the rich nanoscale organization of the high performance, n-type polymer poly{[N,N'-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2)) using a combination of high-resolution transmission electron microscopy and scanning transmission electron microscopy. We demonstrate that it is possible to spatially resolve "face-on" lamella through the 2.4 nm alkyl stacking distance corresponding to the (100) reflection. The lamella locally transition between ordered and disordered states over a length scale on the order of 10 nm; however, the polymer backbones retain long-range correlations over length-scales approaching a micrometer. Moreover, we frequently observe overlapping structure implying a number of layers may exist throughout the thickness of the film (~20 nm). The results provide a simple picture, a highly ordered lamella nanostructure over nearly the entire film and ordered domains with overlapping layers providing additional interconnectivity, which unifies prior seemingly contradictory conclusions surrounding this remarkable, high-mobility material.