Carrier concentration profiles of two-dimensional electron gases are investigated in wurtzite, Ga-face Al x Ga 1Ϫx N/GaN/Al x Ga 1Ϫx N and N-face GaN/Al x Ga 1Ϫx N/GaN heterostructures used for the fabrication of field effect transistors. Analysis of the measured electron distributions in heterostructures with AlGaN barrier layers of different Al concentrations (0.15ϽxϽ0.5) and thickness between 20 and 65 nm demonstrate the important role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces. Characterization of the electrical properties of nominally undoped transistor structures reveals the presence of high sheet carrier concentrations, increasing from 6ϫ10 12 to 2ϫ10 13 cm Ϫ2 in the GaN channel with increasing Al-concentration from xϭ0.15 to 0.31. The observed high sheet carrier concentrations and strong confinement at specific interfaces of the N-and Ga-face pseudomorphic grown heterostructures can be explained as a consequence of interface charges induced by piezoelectric and spontaneous polarization effects.

Two dimensional electron gases in AlxGa1−xN/GaN based heterostructures, suitable for high electron mobility transistors, are induced by strong polarization effects. The sheet carrier concentration and the confinement of the two dimensional electron gases located close to the AlGaN/GaN interface are sensitive to a large number of different physical properties such as polarity, alloy composition, strain, thickness, and doping of the AlGaN barrier. We have investigated these physical properties for undoped and silicon doped transistor structures by a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance–voltage profiling measurements. The polarization induced sheet charge bound at the AlGaN/GaN interfaces was calculated from different sets of piezoelectric constants available in the literature. The sheet carrier concentration induced by polarization charges was determined self-consistently from a coupled Schrödinger and Poisson equation solver for pseudomorphically and partially relaxed barriers with different alloy compositions. By comparison of theoretical and experimental results, we demonstrate that the formation of two dimensional electron gases in undoped and doped AlGaN/GaN structures rely both on piezoelectric and spontaneous polarization induced effects. In addition, mechanisms reducing the sheet carrier concentrations like nonabrupt interfaces, dislocations, and the possible influence of surface states on the two dimensional electron gases will be discussed briefly.

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In this report, we present a compilation of reported cetane numbers for pure chemical compounds. The compiled database contains cetane values for 299 pure compounds, including 156 hydrocarbons and 143 oxygenates. Cetane number is a relative ranking of fuels based on the amount of time between fuel injection and ignition. The cetane number is typically measured either in a combustion bomb or in a single-cylinder research engine. This report includes cetane values from several different measurement techniques -each of which has associated uncertainties. Additionally, many of the reported values are determined by measuring blending cetane numbers, which introduces significant error. In many cases, the measurement technique is not reported nor is there any discussion about the purity of the compounds. Nonetheless, the data in this report represent the best pure compound cetane number values available from the literature as of August 2004.

The spin crossover (SCO) phenomenon defines an elegant class of switchable materials that can show cooperative transitions when long-range elastic interactions are present. Such materials can show multistepped transitions, targeted both fundamentally and for expanded data storage applications, when antagonistic interactions (i.e., competing ferro- and antiferro-elastic interactions) drive concerted lattice distortions. To this end, a new SCO framework scaffold, [Fe(bztrz)(Pd(CN))]·n(guest) (bztrz = (E)-1-phenyl-N-(1,2,4-triazol-4-yl)methanimine, 1·n(guest)), has been prepared that supports a variety of antagonistic solid state interactions alongside a distinct dual guest pore system. In this 2-D Hofmann-type material we find that inbuilt competition between ferro- and antiferro-elastic interactions provides a SCO behavior that is intrinsically frustrated. This frustration is harnessed by guest exchange to yield a very broad array of spin transition characters in the one framework lattice (one- (1·(HO,EtOH)), two- (1·3HO) and three-stepped (1·∼2HO) transitions and SCO-deactivation (1)). This variety of behaviors illustrates that the degree of elastic frustration can be manipulated by molecular guests, which suggests that the structural features that contribute to multistep switching may be more subtle than previously anticipated.

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Nanoparticles (diameter of approximately 5 to 50 nm) easily pass through typical pore throats in reservoirs, but physicochemical attraction between nanoparticles and pore walls may still lead to significant retention. We conducted an extensive series of nanoparticle-transport experiments in core plugs and in columns packed with crushed sedimentary rock, systematically varying flow rate, type of nanoparticle, injection-dispersion concentration, and porous-medium properties. Effluent-nanoparticle-concentration histories were measured with fine resolution in time, enabling the evaluation of nanoparticle adsorption in the columns during slug injection and post-flushes. We also applied this analysis to nanoparticle-transport experiments reported in the literature.Our analysis suggests that nanoparticles undergo both reversible and irreversible adsorption. Effluent-nanoparticle concentration reaches the injection concentration during slug injection, indicating the existence of an adsorption capacity. Experiments with a variety of nanoparticles and porous media yield a wide range of adsorption capacities (from 10 -5 to 10 1 mg/g for nanoparticles and rock, respectively) and also a wide range of proportions of reversible and irreversible adsorption. Reversible-and irreversible-adsorption sites are distinct and interact with nanoparticles independently. The adsorption capacities are typically much smaller than monolayer coverage. Their values depend not only on the type of nanoparticle and porous media, but also on the operating conditions, such as injection concentration and flow rate.

Composites of C1 and C2 were analyzed in various roentgenographic projections to elucidate osseous interrelationships and the effect of overlap of different portions of these two vertebrae in standard radiographic projections during differing stages of postnatal chondro-osseous transformation. In anteroposterior projections the dentocentral synchrondroses of C2 normally was located below the inferior rim of the C1 anterior ossification center. The upper extent of the dens ossification center was behind this anterior C1 center. The overlap made visualization of the ossiculum terminale difficult. The spinous process of C1 could be confused with the ossiculum. In transverse projections, the normal laxity characteristic of young children allowed considerable variation in rotational interrelationships. Various degrees of such instability are illustrated. In lateral views variation of the anterior contour of the dens was significant. Such variation must be considered developmental due to the location and direction of growth of the chondrum terminale and interactive modeling between C1 and C2 to allow extension at this particular joint.