In October 1999, Eastman Kodak and Sanyo Electric jointly announced the development of a high quality, 2.4 inch diagonal Full Color active matrix Organic Light Emitting Diode (OLED) display. This technology demonstration resulted from the successful integration of Kodak's organic electroluminescence display technology and Sanyo's low temperature polysilicon TFT technology. Commercial samples are expected to reach the market in 2001. The active matrix OLED displays feature a wider viewing angle and a faster response speed than conventional LCDs. With its low power consumption, high brightness and thin design, these OLED displays when incorporated in digital cameras, personal digital assistants (PDA), videophones and other portable imaging devices, will offer a superior value proposition to consumer electronics products. Several OLED display designs are under development now to serve various market segments. This paper will summarize the status of active matrix full color OLED display development, the key technical challenges, and the path ahead.
A non‐contact vacuum‐patterning method is described to sublime OLED materials from a donor to a substrate. Radiation‐induced sublimation transfer (RIST) enables the manufacture of full‐color OLED devices on large‐scale mother glass, at high yield, by eliminating precision shadow masks and donor contact, which are used in evaporation and laser‐induced thermal imaging, respectively. Device performance (color, efficiency, stability) is reported for RIST devices and evaporated controls; comparisons to evaporation and other patterning methods are described, and a full‐color AM‐OLED device was fabricated.
In this work we describe the technology developments behind our current and future generations of high brightness OLED lighting panels. We have developed white and amber OLEDs with excellent performance based on the stacking approach, Current products achieve 40–60 lm/W, while future developments focus on achieving 80 lm/W or higher.
Catastrophic failure due to electrical shorting is currently one of the key reliability challenges for commercial organic light emitting diode (OLED) solid-state lighting panels. Here, we explore the origin of panel-killing shorts through the use of a temperature-selective electroluminescence imaging technique that allows us to locate them early in their life cycle and study their growth over time. We identify two general classes of panel defect, termed bright spots and hot spots, which respectively originate from indium-tin-oxide agglomerations and microscale organic semiconductor dust particles on the substrate. The former are largely benign, whereas the latter can lead to local shunts that grow over time and cause catastrophic failure. We understand the growth process as a self-reinforcing cycle, where shunt-induced heating volatilizes the surrounding organic semiconductor, which in turn expands the shunt and leads to even more heating. Based on these results, we identify several practical strategies to arrest the growth of early-stage shorts or prevent them entirely, which could reduce the cost and improve the reliability of OLED lighting.
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