Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime in boron-doped Cz Si decreases upon light exposure due to...

High spin-orbit torques (SOTs) generated by topological materials and heavy metals interfaced with a ferromagnetic layer show promise for next generation magnetic memory and logic devices. SOTs generated from the in-plane spin polarization along y-axis originated by the spin Hall and Edelstein effects can switch magnetization collinear with the spin polarization in the absence of external magnetic fields. However, an external magnetic field is required to switch the magnetization along x and z-axes via SOT generated by y-spin polarization. Here, we present that the above limitation can be circumvented by unconventional SOT in magnetron-sputtered thin film MnPd 3 . In

We examine the DC and radio frequency (RF) response of superconducting transmission line resonators comprised of very thin NbTiN films, [Formula: see text] in thickness, in the high-temperature limit, where the photon energy is less than the thermal energy. The resonant frequencies of these superconducting resonators show a significant nonlinear response as a function of RF input power, which can approach a frequency shift of [Formula: see text] in a [Formula: see text] span in the thinnest film. The strong nonlinear response allows these very thin film resonators to serve as high kinetic inductance parametric amplifiers.

In type-II superconductors exposed to magnetic fields between upper and lower critical values, Hc1 and Hc2, penetrating magnetic flux forms a lattice of vortices whose motion can induce dissipation. Consequently, the magnetization M of superconductors is typically progressively weakened with increasing magnetic field B ∝ nv (for vortex density nv). However, some materials exhibit a nonmonotonic M (B), presenting a maximum in M at what is known as the second magnetization peak. This phenomenon appears in most classes of superconductors, including low Tc materials, iron-based, and cuprates, complicating pinpointing its origin and garnering intense interest. Here, we report on vortex dynamics in optimally doped and overdoped HgBa2CuO4+x crystals, with a focus on a regime in which plastic deformations of the vortex lattice govern magnetic properties. Specifically, we find that both crystals exhibit conspicuous second magnetization peaks and, from measurements of the field-and temperature-dependent vortex creep rates, identify and characterize phase boundaries between elastic and plastic vortex dynamics, as well as multiple previously unreported transitions within the plastic flow regime. We find that the second magnetization peak coincides with the elastic-to-plastic crossover for a very small range of high fields, and a sharp crossover within the plastic flow regime for a wider range of lower fields. We find evidence that this transition in the plastic flow regime is due to a dimensional crossover, specifically a transition from 3D to 2D plastic dynamics.

The minority carrier lifetime in B-doped Czochralski (Cz) Si declines upon carrier injection due to light-induced degradation (LID), which is attributed to the formation of a recombination-active boron−oxygen complex. Ga-doped Cz Si does not undergo LID. Previously, we showed that B-doped Cz Si undergoes a transition from paramagnetic to diamagnetic due to LID. Herein, we show that Ga-doped Cz Si remains paramagnetic upon carrier injection. This suggests that either the shallow hole traps that are formed in B-doped Cz Si are absent in Ga-doped Cz Si, or the negative-U centers in Ga-doped Cz Si do not transform into a recombination-active configuration, because the shallow acceptor trap state is shallower than the Ga acceptor level in the forbidden gap. In contrast to B-doped Cz Si, the defect signatures in Ga-doped Cz Si do not change upon light exposure, as detected by both electron paramagnetic resonance and deep-level transient spectroscopy.