Molecular beam epitaxially (MBE)-grown InAsSb nearly lattice matched to (001) GaSb substrates has been studied by infrared absorption, photoluminescence (PL), and double crystal x-ray diffraction (DCXRD). The absorption measurements, made at temperatures of 6–295 K, resulted in determinations of the temperature and compositional dependencies of the energy gap and the absorption coefficients for InAs1−xSbx (0⩽x⩽0.192). Temperature- and laser excitation power-dependent PL measurements showed only a single band edge peak for the ternary samples (Δa/a⩽+0.623%). Both low temperature PL linewidths (as narrow as 4.3 meV) and observations of LO-phonon replicas indicate the good quality of this material. However, careful analysis of the PL data indicates that even this good material may have a tendency for phase separation resulting in compositional inhomogeneity as reported previously for MBE-grown InAsSb. (004) DCXRD measurements resulted in lattice mismatches between −0.629%⩽Δa/a⩽+0.708% for these samples, while (115) DCXRD measurements indicated that tensile strain persisted in the epilayers, even for thicknesses up to 1.4 μm.
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