Organic-inorganic hybrid perovskite (OIHP) photodetectors that simultaneously achieve an ultrafast response and high sensitivity in the near-infrared (NIR) region are prerequisites for expanding current monitoring, imaging, and optical communication capbilities. Herein, we demonstrate photodetectors constructed by OIHP and an organic bulk heterojunction (BHJ) consisting of a low-bandgap nonfullerene and polymer, which achieve broadband response spectra up to 1 μm with a highest external quantum efficiency of approximately 54% at 850 nm, an ultrafast response speed of 5.6 ns and a linear dynamic range (LDR) of 191 dB. High sensitivity, ultrafast speed and a large LDR are preeminent prerequisites for the practical application of photodetectors. Encouragingly, due to the high-dynamicrange imaging capacity, high-quality visible-NIR actual imaging is achieved by employing the OIHP photodetectors. We believe that state-of-the-art OIHP photodetectors can accelerate the translation of solution-processed photodetector applications from the laboratory to the imaging market.

Photodetectors built from conventional bulk materials such as silicon, III-V or II-VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low-cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite-based photodetectors always suffer from nonideal quantum efficiency and high-power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high-performance photodetectors.

The intriguing carrier dynamics in graphene heterojunctions have stimulated great interest in modulating the optoelectronic features to realize high-performance photodetectors. However, for most phototransistors, the photoresponse characteristics are modulated with an electrical gate or a static field. In this paper, we demonstrate a graphene/C60/pentacene vertical phototransistor to tune both the photoresponse time and photocurrent based on light modulation. By exploiting the power-dependent multiple states of the photocurrent, remarkable logical photocurrent switching under infrared light modulation occurs in a thick C60 layer (11 nm) device, which implies competition of the photogenerated carriers between graphene/C60 and C60/pentacene. Meanwhile, we observe a complete positive-negative alternating process under continuous 405 nm irradiation. Furthermore, infrared light modulation of a thin C60 (5 nm) device results in a photoresponsivity improvement from 3425 A/W up to 7673 A/W, and we clearly probe the primary reason for the distinct modulation results between the 5 and 11 nm C60 devices. In addition, the tuneable bandwidth of the infrared response from 10 to 3 × 103 Hz under visible light modulation is explored. Such distinct types of optical modulation phenomena and logical photocurrent inversion characteristics pave the way for future tuneable logical photocurrent switching devices and high-performance phototransistors with vertical graphene heterojunction structures.