Recent Progress on Electrical and Optical Manipulations of Perovskite Photodetectors

Abstract

Photodetectors built from conventional bulk materials such as silicon, III-V or II-VI compound semiconductors are one of the most ubiquitous types of technology in use today. The past decade has witnessed a dramatic increase in interest in emerging photodetectors based on perovskite materials driven by the growing demands for uncooled, low-cost, lightweight, and even flexible photodetection technology. Though perovskite has good electrical and optical properties, perovskite-based photodetectors always suffer from nonideal quantum efficiency and high-power consumption. Joint manipulation of electrons and photons in perovskite photodetectors is a promising strategy to improve detection efficiency. In this review, electrical and optical characteristics of typical types of perovskite photodetectors are first summarized. Electrical manipulations of electrons in perovskite photodetectors are discussed. Then, artificial photonic nanostructures for photon manipulations are detailed to improve light absorption efficiency. By reviewing the manipulation of electrons and photons in perovskite photodetectors, this review aims to provide strategies to achieve high-performance photodetectors.

UV and Visible Photodetectors of MAPbBr3 and MAPbCl3 Perovskite Single Crystals via Single Photocarrier Transport Design

“…A similar effect has been found in perovskite photodetectors in which the defects in the film were induced by an external electrostatic field. [48] The photogenerated carriers trapped by the adsorbents and water, both on the surface and in the interface, can also generate a photogating effect. Conversely, under 640 nm illumination, the responsivity hardly changes even with changes in the incident power.…”

Recent Progress on Perovskite Photodetectors for Narrowband Detection

“…where Δf is the bandwidth; it should be noted that when the total noise in the device is mainly scattered particle noise in the dark current, D* can also be expressed as follows [4,51,52]…”

“…It depends on the photodetector's responsivity and noise, indicating the ability of the device to detect the weakest light intensity. D* can be generally described as followswhere Δ f is the bandwidth; it should be noted that when the total noise in the device is mainly scattered particle noise in the dark current, D* can also be expressed as follows [ 4,51,52 ] where I dark is the dark current.…”

“…According to the range of light response, photodetectors can be divided into broadband photodetectors and narrowband photodetectors. [1][2][3][4] Broadband photodetectors currently dominate the mainstream photodetectors, but there is a growing demand for photodetectors capable of detecting narrow spectral ranges with the rise of emerging applications. For example, military, medical, and information fields that need to implement solar-blind communication, [5][6][7] RGB color recognition and imaging, [8][9][10][11] artificial intelligence-based machine vision, [12,13] fluorescence imaging, [14,15] and other functions.…”

Combining printing and nanoparticle assembly: Methodology and application of nanoparticle patterning

“…Photodetectors convert optical signals into electrical signals, usually in the form of current or voltage. 142 , 143 It is important for photodetectors to be sensitive to light intensity and spectral response speed. In addition to changing material properties, constructing micro-nano arrays is also a very effective method to improve light intensity sensitivity.…”