A novel electrostatic discharge (ESD) protection device, namely, a highly latchup-immune gate-coupled p-type low-voltage-trigger silicon-controlled rectifier, has been demonstrated to be an effective ESD protection device with low capacitive-loading effect. With the proper control circuit, a trigger voltage higher than 10 V and a trigger current larger than 90 mA can be achieved, while the holding voltage is still higher than 3 V under normal operation, which provides excellent latchup immunity. In the event of an ESD, this novel silicon-controlled rectifier device could trigger quickly and provide an effective discharging path.Index Terms-Electrostatic discharge (ESD), I/O pad, latchup, low-loading, silicon-controlled rectifier (SCR).
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