Simulation analysis has been carried out to determine the perfect structural parameters of homojunction p-i-n In0.7Ga0.3N solar cell to obtain maximum overall efficiency. It has been demonstrated that n-layer of 16-nm, intrinsic layer (i-layer) of 0.5-μm and p-layer of 3-μm thickness with specific doping concentrations of 1·1020 cm–3 for n-layer and 1·1018 cm–3 for p-layer allow us to achieve the maximum efficiency 29.21%. The solar cell structure provides an open circuit voltage of 1.0 V, short circuit current density of 33.15 mA/cm2 and the percentage of fill factor value of 88.03%. However, the efficiency drops drastically, if the dislocation density in i-layer is higher than 1·1014 cm–3, and unintentional doping concentration within i-layer is beyond 1.5·1016 cm–3 of the structure.
An In0.17Ga0.83N light emitting diode (LED) structure on ScAlMgO4 (0001) substrate is modeled for high intensity red emission. The high indium composition (In > 15%) inside the c-plane polar quantum well (QW) for longer wavelength emission degrades the structural and optical properties of LEDs because of induced strain energy and quantum confinement Stark effect. To compensate these effects, it has been demonstrated by simulation that an AlyGa1–yN cap layer of 2 nm thick and Al composition of 17% deposited onto QW of 3 nm thick and In composition of 35% will allow to have less defect density and higher intensity red emission at 663 nm than that of In0.17Ga0.83N/InxGa1–xN LEDs grown on ScAlMgO4 (0001) substrate. This LED structure has perfect in-plane equilibrium lattice parameter (αeq = 3.249 Å) and higher logarithmic oscillator strength (Γ = –0.93) values.
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