Simulation analysis to optimize the performance of homojunction p-i-n In0.7Ga0.3N solar cell

Abstract

Simulation analysis has been carried out to determine the perfect structural parameters of homojunction p-i-n In0.7Ga0.3N solar cell to obtain maximum overall efficiency. It has been demonstrated that n-layer of 16-nm, intrinsic layer (i-layer) of 0.5-μm and p-layer of 3-μm thickness with specific doping concentrations of 1·1020 cm–3 for n-layer and 1·1018 cm–3 for p-layer allow us to achieve the maximum efficiency 29.21%. The solar cell structure provides an open circuit voltage of 1.0 V, short circuit current density of 33.15 mA/cm2 and the percentage of fill factor value of 88.03%. However, the efficiency drops drastically, if the dislocation density in i-layer is higher than 1·1014 cm–3, and unintentional doping concentration within i-layer is beyond 1.5·1016 cm–3 of the structure.

Numerical simulation of homojunction p-i-n In0.4Ga0.6N solar cell with different absorber layer configurations

“…It can be explained by the correlation of maximum output power (Pmax), Voc, and Jsc, as expressed in Eq. (10). As the thickness of the n-layer increased, the Voc and Jsc also increased and remained constant across subsequent thicknesses.…”

“…where 𝑥 is the In composition of the InxGa1-xN; 𝐸 𝑔 𝐼𝑛𝑁 is the bandgap energy of indium nitride (InN) and is equal to 0.70 eV; 𝐸 𝑔 𝐺𝑎𝑁 is the bandgap energy of gallium nitride (GaN) and is equal to 3.42 eV; 𝑏 is the bowing factor equal to 1.43 eV. The electron and hole mobilities can be calculated as a function of carrier density with the Caughey-Thomas approximation [10], as shown in Eq. ( 2)…”

“…Typically, for the InGaN-based single-junction solar cell to achieve a conversion efficiency of more than 20%, InGaN layers with an indium composition of more than 40% and several hundred nanometers are required [7][8][9][10]. However, the growth of thick and high-quality…”

Maximizing Conversion Efficiency: A Numerical Analysis on P+ a-SiC/i Interface/n-Si Heterojunction Solar Cells with AMPS-1D

“…Previous studies have touched upon the theoretical advantages an intrinsic layer might provide, suggesting that its integration could notably enhance the efficiency and performance of the heterojunction solar cell [20,21]. The integration of an intrinsic layer in a PIN structure can improve the efficiency of a solar cell compared to a PN junction [22][23][24][25]. Without the application of an antireflection coating, the perovskite-Si solar cell with a three-terminal heterojunction bipolar transistor design achieves a high efficiency of up to 28.6% [26].…”

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“…Our strategy for the next decade included theoretical consideration of new effects in low-dimensional semiconductor structures [7][8][9][10], establishment of new principles and approaches to create and study functionality of lasers and LEDS [11][12][13][14][15][16][17][18], clarification of some peculiarities in new hetero-and hybrid structures [19][20][21], application of sensor and photovoltaic cells [22][23][24][25][26][27], use of semiconductor, optic and quantum electronic devices in ecology, communications, renewable energetics and health care [28][29][30][31][32][33][34][35][36][37].…”