Accurate conversion of wideband multi-GHz analog signals into the digital domain has long been a target of analog-to-digital converter (ADC) developers, driven by applications in radar systems, software radio, medical imaging, and communication systems. Aperture jitter has been a major bottleneck on the way towards higher speeds and better accuracy. Photonic ADCs, which perform sampling using ultra-stable optical pulse trains generated by mode-locked lasers, have been investigated for many years as a promising approach to overcome the jitter problem and bring ADC performance to new levels. This work demonstrates that the photonic approach can deliver on its promise by digitizing a 41 GHz signal with 7.0 effective bits using a photonic ADC built from discrete components. This accuracy corresponds to a timing jitter of 15 fs -a 4-5 times improvement over the performance of the best electronic ADCs which exist today. On the way towards an integrated photonic ADC, a silicon photonic chip with core photonic components was fabricated and used to digitize a 10 GHz signal with 3.5 effective bits. In these experiments, two wavelength channels were implemented, providing the overall sampling rate of 2.1 GSa/s. To show that photonic ADCs with larger channel counts are possible, a dual 20-channel silicon filter bank has been demonstrated. 289-296 (1992). 11. J. Kim, J. Chen, J. Cox, and F. X. Kärtner, "Attosecond-resolution timing jitter characterization of free-running mode-locked lasers using balanced optical cross-correlation," Opt. Lett. microwave signals at 40-GHz with higher than 7-ENOB resolution," Opt. ©2012 Optical Society of America

Photonic integrated circuits (PICs) provide a compact and stable platform for quantum photonics.Here we demonstrate a silicon photonics quantum key distribution (QKD) transmitter in the first high-speed polarization-based QKD field tests. The systems reach composable secret key rates of 950 kbps in a local test (on a 103.6-m fiber with a total emulated loss of 9.2 dB) and 106 kbps in an intercity metropolitan test (on a 43-km fiber with 16.4 dB loss). Our results represent the highest secret key generation rate for polarization-based QKD experiments at a standard telecom wavelength and demonstrate PICs as a promising, scalable resource for future formation of metropolitan quantum-secure communications networks.Quantum key distribution (QKD) remains the only quantum-resistant method of sending secret information at a distance [1,2]. The first QKD system ever devised used polarization of photons to encode information [3,4]. QKD has since progressed rapidly to several deployed systems that can reach point-to-point secret key generation rates in the upwards of 100 kbps [5][6][7][8] and to other photonic degrees of freedom: time [9][10][11][12], frequency [13][14][15][16], phase [17], quadrature [18][19][20][21], and orbital angular momentum [22]. While polarization remains an attractive choice for free-space QKD due to its robustness against turbulence [23][24][25][26][27][28], polarization is commonly thought to be unstable for fiber-based QKD. For this reason, there has been a strong interest in translating the polarization QKD components into photonic integrated circuits (PICs), which provide a compact and phase-stable platform capable of correcting for polarization drifts in the channel. Recently, silicon-based polarization QKD transmitters were used for laboratory QKD demonstrations [29,30], but their performance advantage over standard telecommunication components has yet to be demonstrated. Here we report the first field tests using high-speed silicon photonics-based transmitter for polarization-encoded QKD.The silicon photonics platform allows for the integration of multiple high-speed photonic operations into a single compact circuit [31][32][33][34]. Operating at gigahertz bandwidth, a silicon photonics polarization QKD transmitter can correct for polarization drifts with typical millisecond time scales in a metropolitan-scale fiber link. Furthermore, silicon nanophotonic devices are compatible with the existing complementary metal-oxidesemiconductor (CMOS) processes that have enabled monolithic integration of photonics and electronics, possibly leading to future widespread utilization of QKD.The QKD transmitter demonstrated here is manufactured using a CMOS-compatible process. The trans-mitter combines a 10-Gbps Mach-Zehnder Modulator (MZM) with interleaved grating couplers, which convert the polarization of a photon in an optical fiber into the path the photon takes in the integrated circuit, and vice versa. The high-speed polarization control is enabled by electro-optic carrier depletion modulation withi...

SOI CMOS compatible Si waveguide photodetectors are made responsive from 1100 to 1750 nm by Si+ implantation and annealing. Photodiodes have a bandwidth of >35 GHz, an internal quantum efficiency of 0.5 to 10 AW-1, and leakage currents of 0.5 nA to 0.5 microA. Phototransistors have an optical response of 50 AW-1 with a bandwidth of 0.2 GHz. These properties are related to carrier mobilities in the implanted Si waveguide. These detectors exhibit low optical absorption requiring lengths from <0.3 mm to 3 mm to absorb 50% of the incoming light. However, the high bandwidth, high quantum efficiency, low leakage current, and potentially high fabrication yields, make these devices very competitive when compared to other detector technologies.

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