CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

Geis, M. W.; Spector, Steven J.; Grein, Matthew E.; Schulein, Robert; Yoon, Junghyo; Lennon, Donna; Deneault, S. J.; Gan, Fuwan; Käertner, Franz X.; Lyszczarz, T. M.

doi:10.1109/lpt.2006.890109

Cited by 154 publications

(99 citation statements)

References 11 publications

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“…Devices which utilize defect mediated absorption have been established for some time as a viable method for the development of monolithic waveguide photodetectors suitable for use in the C and L bands (for example see [16,23,24]). The introduction of defect states within the bandgap permit the absorption of sub-bandgap photons through a mechanism of optical absorption and thermal excitation from the defect state [16].…”

Section: Photodetectionmentioning

confidence: 99%

Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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Abstract:Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm. Kaertner, and T. M. Lyszczarz, "CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band," IEEE Photon.

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Section: Photodetectionmentioning

confidence: 99%

Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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“…Other all-silicon detectors, based on SSA [19,21] or defect mediated absorption [9,22,23], require the photogenerated carriers to be swept away from the waveguide through highly doped regions or electric lines directly contacted to the Si core, thus resulting in additional optical loss. In contrast, the capacitively coupled electrodes of the CLIPP perform a remote monitoring of the optical field, thus avoiding any perturbation [16].…”

Section: Clipp Concept and Fabricationmentioning

confidence: 99%

Non-invasive monitoring and control in silicon photonics using CMOS integrated electronics

Grillanda¹,

Carminati²,

Morichetti³

et al. 2014

Optica

117

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As photonics moves from the single-device level toward large-scale, integrated, and complex systems on a chip, monitoring, control, and stabilization of the components become critical. We need to monitor a circuit non-invasively and apply a simple, fast, and robust feedback control. Here, we show non-invasive monitoring and feedback control of high-quality-factor silicon (Si) photonic resonators assisted by a transparent detector that is directly integrated inside the cavity. Control operations are entirely managed by a CMOS microelectronic circuit that is bridged to the Si photonic chip and hosts many parallel electronic readout channels. Advanced functionalities, such as wavelength tuning, locking, labeling, and swapping, are demonstrated. The non-invasive nature of the transparent monitor and the scalability of the CMOS readout system offer a viable solution for the control of arbitrarily reconfigurable photonic integrated circuits aggregating many components on a single chip.

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“…Germanium is easier to integrate, since it is a CMOS compatible material, but the growth of high quality germanium is a non-standard process usually requiring specialized equipment. Another technique that has been used to successfully produce silicon photodectors is the creation of mid-bandgap states directly in the silicon [26]. With the correct implant and anneal, crystal defects can be created to absorb this radiation and generate a photocurrent [27].…”

Section: All Silicon Photodiodementioning

confidence: 99%

Silicon photonics devices for integrated analog signal processing and sampling

Spector

Sorace-Agaskar

2014

Nanophotonics

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Silicon photonics offers the possibility of a reduction in size weight and power for many optical systems, and could open up the ability to build optical systems with complexities that would otherwise be impossible to achieve. Silicon photonics is an emerging technology that has already been inserted into commercial communication products. This technology has also been applied to analog signal processing applications. MIT Lincoln Laboratory in collaboration with groups at MIT has developed a toolkit of silicon photonic devices with a focus on the needs of analog systems. This toolkit includes low-loss waveguides, a high-speed modulator, ring resonator based filter bank, and all-silicon photodiodes. The components are integrated together for a hybrid photonic and electronic analog-to-digital converter. The development and performance of these devices will be discussed. Additionally, the linear performance of these devices, which is important for analog systems, is also investigated.

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CMOS-Compatible All-Si High-Speed Waveguide Photodiodes With High Responsivity in Near-Infrared Communication Band

Cited by 154 publications

References 11 publications

Optical detection and modulation at 2µm-25µm in silicon

Optical detection and modulation at 2µm-25µm in silicon

Non-invasive monitoring and control in silicon photonics using CMOS integrated electronics

Silicon photonics devices for integrated analog signal processing and sampling

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