Imaging thermography in the 3–5μm wavelength range is applied to the analysis of thermal properties of high-power diode lasers. We investigate these devices by inspecting their front facets as well as their active regions along the resonator. The latter is done through top windows within the substrate. Raw data are found to be mostly interfered by thermal radiation traveling through the substrate, which is transparent for infrared light. Substracting this contribution and recalibration allows for obtaining realistic temperature profiles along laser structures. Facet heating is analyzed complementary by micro-Raman spectroscopy. We show how hot spots at the front facet, in the substrate, or even in the active region within the substrate are discovered. Our approach paves the way for an advanced methodology of device screening.
We demonstrate the applicability of imaging thermography for investigations of mechanisms associated with gradual degradation in diode lasers. The introduction of two spectral channels provides the means for separate observation of deep level luminescence and thermal radiation emitted according to Planck's law. In the near IR region we found the signal detected by the camera to be mainly affected by mid-gap deep-level luminescence. An intensity increase of the luminescence signal for an aged diode laser compared to an unaged device is noticed. It can be explained by an increase of deep level defect concentration during the aging. In the mid IR, we mainly encounter thermal radiation, which can be used for the analysis of the thermal properties of devices. In present work the thermal behavior of the device subjected to an aging of 3000 hours is analyzed. A significant increase of device temperature is noticed.
Thermal tuning properties of passively cooled 808nm emitting high-power diode laser bars are analyzed. Data from standard devices packaged on Cu heat sinks and identical devices mounted on expansion-matched Cu–W heat sinks are compared. For a standard device, we find up to one-fifth of the thermal tuning rate of −(0.56±0.04)meVK−1 to be caused by pressure tuning driven by the relaxation of compressive packaging-induced stress for increasing temperatures. For devices packaged on expansion-matched heat sinks the observed tuning rate of −(0.46±0.01)meVK−1 represents almost the genuine thermal tuning rate of the semiconductor device structure. Thus this technology potentially leads to improved device properties.
The implementation of more complex diode laser concepts also increases the demands for improved measurement technology and the need for new analytical tools. In particular concerning the thermal properties of novel high-power devices, there are several established experimental methods. Micro-Raman spectroscopy as well as reflectance techniques, such as photo-and thermo-reflectance measurements, provide information on facet temperatures, whereas emission wavelength shifts enable for the determination of averaged temperatures along the laser axis. Here we report on the successful application of a complementary technique, namely imaging thermography in the 1.5-5 µm wavelength range using a thermocamera, to diode laser analysis. The use of this known technique for the purpose of device analysis became possible due to the enormous technical progress achieved in the field of infrared imaging. We investigate highpower diode lasers and laser arrays by inspecting their front facets. We find raw data to be frequently contaminated by thermal radiation traveling through the substrate, which is transparent for infrared light. Subtraction of this contribution and re-calibration allows for the determination of realistic temperature profiles along laser structures, however, without spatially resolving the facet heating at the surface of the laser waveguide. Furthermore, we show how hot spots at the front facet can be pinpointed. Thus our approach also paves the way for an advanced methodology of device screening.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.