Spatially resolved and temperature dependent thermal tuning rates of high-power diode laser arrays

Abstract

Thermal tuning properties of passively cooled 808nm emitting high-power diode laser bars are analyzed. Data from standard devices packaged on Cu heat sinks and identical devices mounted on expansion-matched Cu–W heat sinks are compared. For a standard device, we find up to one-fifth of the thermal tuning rate of −(0.56±0.04)meVK−1 to be caused by pressure tuning driven by the relaxation of compressive packaging-induced stress for increasing temperatures. For devices packaged on expansion-matched heat sinks the observed tuning rate of −(0.46±0.01)meVK−1 represents almost the genuine thermal tuning rate of the semiconductor device structure. Thus this technology potentially leads to improved device properties.

Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs‐based diode lasers

“…In general, the temperature values determined from line shifts show a smaller scattering but might be systematically affected by strain causing an additional line shift. This can be an issue if packaging-induced strain relaxes with increasing temperature [111].…”

Color quality consideration when switching from FL to LED

“…Research states that it is important to take into account the operating conditions o f LED sources, i.e. temperature [27][28][29][30] or supply current [31]. These issues are a lso taken into account during modeling of SPDs [17,[32][33].…”