Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (BHN) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO substrate. The PL line width of WS/h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS/SiO (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.

Increasing dissipation-free supercurrent has been the primary issue for practical application of superconducting wires. For magnesium diboride, MgB 2 , carbon is known to be the most effective dopant to enhance high-field properties. However, the critical role of carbon remains elusive, and also low-field critical current density has not been improved. Here, we have undertaken malic acid doping of MgB 2 and find that the microscopic origin for the enhancement of high-field properties is due to boron vacancies and associated stacking faults, as observed by high-resolution transmission electron microscopy and electron energy loss spectroscopy. The carbon from the malic acid almost uniformly encapsulates boron, preventing boron agglomeration and reducing porosity, as observed by three-dimensional X-ray tomography. The critical current density either exceeds or matches that of niobium titanium at 4.2 K. Our findings provide atomic-level insights, which could pave the way to further enhancement of the critical current density of MgB 2 up to the theoretical limit.

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Commercial purity aluminium sheets were severely plastic deformed by accumulative roll bonding (ARB). Changes in electrical resistivity at 77 K and microstructure during the ARB process were traced up to 12 cycles, which corresponded to an equivalent strain of 10. The resistivity at 77 K increased with increasing number of ARB cycles, then saturated after about the sixth ARB cycle with a maximum increment of resistivity from starting material of about 1.1 n m. Since lattice defects affect the resistivity of metals, the internal dislocation density and the density of grain boundaries were evaluated from scanning transmission electron microscopy images using Ham's method and grain boundary maps obtained from electron back-scattering diffraction, respectively. The relationship between the change in resistivity and the lattice defects is discussed.

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