The nitride layers were prepared by direct thermal nitridation of 6H-SiC substrates at 1200-1570 C in a NH 3 atmosphere. The layer was characterized by using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and Raman scattering spectroscopy. The thickness of the nitride layers prepared at lower than 1400 C was estimated to be less than 10 nm. The higher nitridation temperature resulted in the formation of a thicker surface layer. XPS measurement showed that the surface layer was composed of N, Si, C and O. Peaks corresponding to -Si 3 N 4 were detected in the Raman spectra and the XRD patterns of the sample prepared at higher than 1500 C, indicating the crystallization of the nitrided layer.
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