Preparation and Properties of Boron Thin Films

Thermoelectric properties of photo- and thermal CVD boron and boron phosphide films

“…Especially a remarkable decrease in a for photo-thermal CVD boron film should be noted. However some exceptions are observed for p-BP between 600 and 700 K and for B between 300 and 500 K, which would probably be caused by a stress effect [10] or piezoresistance characteristics [11]. Thermoelectric power is also related to disorder states in the specimen.…”

Thermoelectric Properties of Boron and Boron Phosphide Films

“…We could measure of boron phosphide at higher temperatures than for boron, which would be caused by low stress from the silica substrate. Boron "lms are destroyed at 800 K by thermal stress while boron phosphide "lms are stable up to 1000 K. A match of thermomechanical properties, such as a thermal expansion coe$cient and elastic moduli between the "lm and a silica glass would be better for boron (8). The present "lms have high resistivity so it is necessary to measure thermoelectric properties above 400}600 K. The di!erences in the electrical conductivities between SSMBD and LPCVD "lms would re#ect the concentrations of trap levels due to the hydrogen desorption reaction in the "lm growth process.…”

A review on the methods of preparation of elemental boron

“…Besides, thermal decomposition of diborane also was used for CVD of boron on the metal substrates to improve the hardness and wear resistance of these substrates, and for synthesis of boron nanostructures . Kamimura et al . found that pyrolysis of decaborane on qurtze substrates surface, heated to 1473 K by a halogen lamp, could give rise to the boron films of high quality, which consisted of α ‐rhombohedral boron.…”