A novel positive resist was prepared by sensitizing poly(p‐trimethylsilyloxystyrene) with p‐nitro‐benzyl‐9, 10‐diethoxyanthracene‐2‐sulfonate (NBAS) which was found to be a deep UV bleachable acid precursor. The silylated polymer is converted to alkaline soluble poly(p‐hydroxy‐styrene) in the presence of acid and a small amount of water. The photoresist gives high resolution positive patterns on imagewise exposure with deep UV light with a sensitivity of 15 mJ/cm2.
It was found that aromatic sulfonamides offer a novel category of photosensitive compounds for negative resists. A photosensitive layer consisting of m-cresol novolak resin and an aromatic sulfonamide such as p-(tolyl sulfonyl)-aniline, benzene sulfonyl aniline, p-toluene sulfonamide or 4,4'-methylene-di(p-tolyl sulfonyl)-aniline is insolubilized in an aqueous base by exposure to deep-UV lights involving KrF excimer laser light. The negative resists exhibited the sensitivities (D
g
0.5) from 25 mJ/cm2 to 80 mJ/cm2 depending on the structure of sulfonamide. By exposure with a KrF excimer laser stepper 0.8 and 0.35 µm line patterns were transferred. The mechanism of the photoinsolubilization is also discussed.
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