When manufacturing prototype devices or low volume custom logic LSIs, the products are being less profitable because of the skyrocketing mask and design costs recent technology node. For 65nm technology node and beyond, the reduction of mask cost becomes critical issue for logic devices especially. We attempt to apply EBDW mainly to critical interconnect layers to reduce the mask expenditure for the reason of technical output reusability.For 65nm node production, new 300mm EB direct writer had been installed. The process technologies have also been developing to meet sufficient qualities and productivities.
Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/16/2015 Terms of Use: http://spiedl.org/termsStudy of device mass production capability of the character projection based electron beam direct writing process technology toward 14 nm node and beyond Abstract. Techniques to appropriately control the key factors for a character projection (CP) based electron beam direct writing technology for mass production are shown and discussed. In order to achieve accurate CD control, the CP technique using the master CP is adopted. Another CP technique, the Packed CP, is used to obtain suitable shot count. For the alignment on the some critical layers which normally have an even surface, the process removing SiO 2 material filled in the alignment marks is added and then the alignment marks can be detected using electron beam. The proximity effect correction using the simplified electron energy flux model and the hybrid exposure are used to obtain enough process margins. As a result, the sufficient CD accuracy, overlay accuracy, and yield are obtained on the 65 nm node device. Due to the proper system control, more than 10,000 production wafers have been successfully exposed so far without any major system downtime. It is shown that those techniques can be adapted to the 32 nm node production with slight modifications. It is expected that by using the Multi Column Cell exposure method, those techniques will be applicable to the rapid establishment for the 14 nm node technology. Kojima et al.: Study of device mass production capability of the character : : : Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/16/2015 Terms of Use: http://spiedl.org/terms
Multi column cell (MCC) exposure system is a promising candidate for the next generation lithography tool. The concept of MCC is parallelization of the electron beam columns with character projection (CP) [1]. In this paper, we would like to describe current CP techniques being used for product manufacturing. We also would like to introduce CP based EBDW method to draw automatically routed wiring area with 14 nm node technology of 20nm half-pitch (hp) case. Pattern density influence for process margin and shot noise tolerance consideration are discussed. Feasibility study of the model character set for router generated wiring drawing is presented.
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