X-ray reciprocal space mapping (XRSM) was employed to investigate epitaxial Bi2Sr2Ca1Cu2Ox(Bi-2212) film. Ordinal cross section XRSM (ω-2θ) and plan view XRSM (ω-ψ) clearly indicated asymmetric intensity distribution of four satellite peaks caused by supercell structure of Bi-2212 film. Modulation vector estimated by XRSM was q=0.2b*+0.9c*. The XRSM image simulated by sawtooth wave vector showed good agreement with asymmetric satellite peaks observed on epitaxial film.
Yttria-stabilized zirconia (YSZ) was grown on Si(100) substrate by pulsed laser deposition (PLD). The laser used in this study was a 266 nm YAG laser with a second function generator modulating only the Q-switch while the primary generator modulated the flash lamp (slower Q-switch). Epitaxial growth was verified on YSZ film deposited without oxygen gas followed by primary deposition in oxygen atmosphere on Si substrate with a ∼0.4-nm-thin oxide layer. The crystallinity was strongly dependent on the thickness of the buffer layer deposited prior to the primary deposition of YSZ. The epitaxial growth was confirmed by φ scan, and ω scan (rocking curve) showed the full width at half maximum (FWHM) of 1.1 deg. The required oxygen pressure for epitaxial growth was quite high compared to that of excimer deposition.
Indium tin oxide (ITO) thin films were deposited on atomically stepped glass substrates (step height of ∼0.2 nm and separation of ∼80 nm) by pulsed laser deposition. The atomically stepped glass was prepared via thermal nanoimprint using an atomically stepped sapphire mold. The surface morphology of the ITO thin film definitely reflected the atomically stepped pattern of the glass substrate surface. The step height and the separation of the ITO film surface were close to those of the nanoimprinted glass surface. The fast Fourier transform analysis of the atomic force microscopy image also confirmed the periodicity of the atomic-step pattern.
NiO thin films containing up to 60 mol % Li were deposited on an ultra smooth sapphire (0001) substrate at room-temperature (RT) by the pulsed laser deposition (PLD) process. From in situ reflection high-energy electron diffraction (RHEED) and ex situ X-ray diffraction (XRD), it was found that the cubic NiO thin film containing 60 mol % Li, deposited at RT, could be epitaxially grown with (111) orientation; however the film became polycrystalline when deposited at 200 °C under the same atmosphere. These results indicate the possible exploration of novel growth of the oxide films using RT PLD process.
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